Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR02C60 Series
2 AMP / 600 V
SILICON CARBIDE
SCHOTTKY RECTIFIER
Features:
•
600V Silicon Carbide Schottky Rectifier
•
New Semiconductor Material
•
Switching Behavior Benchmark
•
No Reverse Recovery
•
No Forward Recovery
•
No Switching Time Change Over Temperature
•
Hermetic Packages Available
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SSR02C 60 D1 HR
│ │ └
Screening: __
= Not Screened
│ │
HR = High Rel
│ │
│ └
Package:
G = Cerpack
│
S.22 = SMD.22
│
│
│
└
Voltage
50 = 500 V
60 = 600 V
Maximum Ratings
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I
O
)
Repetitive Peak Forward Current
(Tc= 100ºC; d/c= 10%)
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Cerpack (G)
SMD.22 (S.22)
SSR02C50
SSR02C60
Symbol
V
RRM
V
RSM
Io
I
FSM
I
FRM
P
D
Top & Tstg
R
θJC
Value
500
600
2
4
7.5
12.5
-55 to +175
12
Units
Volts
Amps
Amps
A
Watts
ºC
ºC/W
1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0204A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR02C60 Series
Symbol
V
F1
V
F2
V
F3
V
F4
V
F5
I
R1
I
R2
I
R3
V
R
=1V
V
R
=10V
V
R
=600V
C
J
Q
C
Electrical Characteristic
Instantaneous Forward Voltage Drop
(I
F
= 0.25A, T
J
= 25ºC, 300
µsec
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 0.5A, T
J
= 25ºC, 300
µsec
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 1.0A, T
J
= 25ºC, 300
µsec
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 2.0A, T
J
= 25ºC, 300
µsec
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 2.0A, T
J
= 150ºC, 300
µsec
pulse)
Reverse Leakage Current
(V
R
= Rated V
R
, T
J
= 25ºC, 300
µsec
pulse min)
Reverse Leakage Current
(V
R
= Rated V
R
, T
J
= 100ºC, 300
µsec
pulse min)
Reverse Leakage Current
(V
R
= Rated V
R
, T
J
= 150ºC, 300
µsec
pulse min)
Junction Capacitance
(T
C
= 25ºC, f = 1MHz)
Total Capacitive Charge
Min
––
––
––
––
––
––
––
––
––
––
Typ
1.05
1.15
1.35
1.75
2.25
0.2
2
25
50
22
5
4.6
Max
––
––
––
Units
Volts
Volts
Volts
Volts
Volts
µA
µA
µA
pF
nC
2.0
2.6
100
––
500
––
––
(V
R
= 400V, I
F
= 2A, di/dt = 200A/µs, T
J
= 150ºC)
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
Available Part Numbers:
SSR02C50G SSR02C50S.22
SSR02C60G SSR02C60S.22
Package
Cerpack (G)
SMD.22 (S.22)
PIN ASSIGNMENT
Pin 1
Pin 2
Anode
Cathode
Anode
Anode
Pin 3
N/A
Anode
Tab
Cathode
N/A
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0204A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR02C60 Series
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0204A
DOC
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