NDT02N60Z
N-Channel Power MOSFET
600 V, 8.0
W
Features
•
•
•
•
•
100% Avalanche Tested
Extremely High dv/dt Capability
Gate Charge Minimized
Zener−protected
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
600 V
R
DS(ON)
MAX
8.0
W
@ 10 V
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJA
Steady State, T
C
= 25°C
Continuous Drain Current R
qJA
Steady State, T
C
= 100°C
Power Dissipation – R
qJA
Steady State, T
C
= 25°C
Pulsed Drain Current
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
D
= 1.4 A)
Peak Diode Recovery (Note 1)
Maximum Temperature for Soldering Leads
Operating Junction and Storage Temperature
Symbol
V
DSS
V
GS
I
D
I
D
P
D
I
DM
I
S
EAS
dV/dt
T
L
T
J
, T
STG
Value
600
±30
0.3
0.21
2.0
5
2.2
38
4.5
260
−55 to
+150
Unit
V
V
A
G (1)
A
W
A
A
mJ
4
V/ns
°C
°C
12
3
N−Channel
D (2, 4)
S (3)
MARKING
DIAGRAM
Drain
4
SOT−223
CASE 318E
STYLE 3
AYW
2N60ZG
G
1
2
3
Gate Drain Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
S
< 2.2 A, di/dt
≤
200 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
THERMAL RESISTANCE
Parameter
Junction−to−Ambient Steady State
NDT02N60Z (Note 2)
NDT02N60Z (Note 3)
Symbol
R
qJA
Value
61
148
Unit
°C/W
A
= Assembly Location
Y
= Year
W
= Work Week
2N60Z = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
2. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces)
3. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
©
Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 0
Publication Order Number:
NDT02N60Z/D
NDT02N60Z
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
V
DS
= V
GS
, I
D
= 50
mA
Reference to 25°C, I
D
= 50
mA
V
GS
= 10 V, I
D
= 0.7 A
V
DS
= 15 V, I
D
= 0.7 A
3.0
3.9
10.2
5.9
1.3
8.0
T
J
= 25°C
T
J
= 125°C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coef-
ficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance (Note 5)
Effective output capacitance,
energy related (Note 7)
Effective output capacitance,
time related (Note 8)
Total Gate Charge (Note 5)
Gate-to-Source Charge (Note 5)
Gate-to-Drain (“Miller”) Charge (Note 5)
Plateau Voltage
Gate Resistance
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
T
J
= 25°C
T
J
= 100°C
V
DD
= 300 V, I
D
= 1.6 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 300 V, I
D
= 1.6 A, V
GS
= 10 V
V
GS
= 0 V, V
DS
= 0 to 480 V
I
D
= constant, V
GS
= 0 V,
V
DS
= 0 to 480 V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
170
22
4.8
7.8
12.4
7.4
1.8
3.8
6.4
11.5
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
4.5
V
mV/°C
W
S
I
GSS
600
605
1
50
±10
mA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 6)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
0.9
0.8
230
V
GS
= 0 V, V
DD
= 30 V, I
S
= 1.6 A,
d
i
/d
t
= 100 A/ms
50
180
495
nC
ns
1.2
V
I
S
= 1.6 A, V
GS
= 0 V
10
6
14
8
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
rr
t
a
t
b
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
5. Guaranteed by design.
6. Switching characteristics are independent of operating junction temperatures.
7. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
8. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
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2
NDT02N60Z
TYPICAL CHARACTERISTICS
2.50
2.25
I
D
, DRAIN CURRENT (A)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5.5 V
5.0 V
30
6.0 V
V
GS
= 10 V to 7.5 V
7.0 V
I
D
, DRAIN CURRENT (A)
6.5 V
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
2
3
4
5
T
J
= −55°C
6
7
8
9
10
T
J
= 150°C
V
DS
= 15 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.5 6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
V
GS
, GATE VOLTAGE (V)
T
J
= 25°C
I
D
= 0.7 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
10
Figure 2. Transfer Characteristics
9
T
J
= 25°C
V
GS
= 10 V
8
7
6
5
0
0.5
1.0
1.5
2.0
2.5
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50
V
GS
= 10 V
I
D
= 0.7 A
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 1 mA
−25
0
25
50
75
100
125
150
0.900
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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3
NDT02N60Z
TYPICAL CHARACTERISTICS
1.15
V
GS(th)
, NORMALIZED THRESHOLD
VOLTAGE (V)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
−50
I
D
= 50
mA
I
DSS
, LEAKAGE (nA)
1000
T
J
= 150°C
10,000
100
T
J
= 125°C
10
T
J
= 100°C
1
−25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1000
12
10
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
350
Q
T
V
DS
8
Q
GS
6
150
4
2
0
0
1
2
3
4
5
6
7
Q
G
, TOTAL GATE CHARGE (nC)
V
DS
= 300 V
T
J
= 25°C
I
D
= 1.6 A
100
50
0
Q
GD
V
GS
250
200
300
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
iss
100
C
oss
10
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
rss
1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 9. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
10
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 150°C
1
T
J
= 125°C
T
J
= 100°C
0.1
T
J
= 25°C
0.01
T
J
= −55°C
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 1.1
t, TIME (ns)
t
d(off)
10
t
d(on)
t
f
t
r
V
GS
= 10 V
V
DD
= 300 V
I
D
= 1.6 A
1
0.1
1
10
100
R
G
, GATE RESISTANCE (W)
0.001
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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4
NDT02N60Z
TYPICAL CHARACTERISTICS
100
V
GS
≤
30 V
Single Pulse
T
C
= 25°C
10
ms
100
ms
1 ms
10 ms
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
dc
1000
0.001
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
100
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
Duty Cycle = 0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
R
qJA
= Steady State = 61°C/W
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
t, TIME (s)
1E−01
1E+00
1E+01
1E+02
1E+03
Figure 14. Thermal Impedance (Junction−to−Ambient)
ORDERING INFORMATION
Device
NDT02N60ZT1G
NDT02N60ZT3G
Package
SOT−223
(Pb−Free, Halogen Free)
Shipping
†
1000 / Tape & Reel
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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