MUR1605 thru MUR1660
®
Pb
Pb Free Plating Product
MUR1605 thru MUR1660
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CA"
Doubler
Series Connection
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"
MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA
UNIT
MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
50
35
50
100
70
100
200
140
200
16.0
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
175
150
A
V
F
0.98
10.0
250
35
90
2.2
-55 to + 150
1.3
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MUR1605 thru MUR1660
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
13
175
150
125
100
75
50
25
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
8
6
4
60 Hz Resistive or
Inductive load
0
0
50
100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
MUR1605-MUR1620
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
MUR1630-MUR1640
100
T
J
=125 C
o
1.0
MUR1660
10
T
J
=25 C
1
o
0.1
0.01
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
