,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MRF450
MRF450A
The RF Line
SOW -30 MHz
RF POWER
TRANSISTORS
NPN SILICON RF POWER TRANSISTORS
NPN SILICON
. . . designed for power amplifier applications in industrial, com-
mercial and amateur radio equ ipment to 30 MHz.
•
Specified 12.5 Volt, 30 MHz Characteristics -
Output Power = 50 Watts
Minimum Gain = 1 1 dB
Efficiency = 50%
MAXIMUM RATINGS
RaiMf^
Colllctor-E miner Voltege
Collectorsaxe Voltage
Emitter-Ba
x
voltage
Collector Current — Continuous
Total Device Oi»ipeJion $ T
C
- 2S°C
Derate above 2S°C
Storage Temperature
flange
Syitfeal
V<XO
Value
M
Unit
Vdc
VCBO
VEBO
l£
P
D
T
Ilg
40
Vdc
*-0
7.5
115
066
-65tQ 4-150
~
Vdc
Adc
Warn
W/°C
°C
THERMAL CHARACTERISTICS
Cheiacierinic
Thermal Resilience. Junction to Ce»
Svmbol
R
flJC
^rpsR\
i
>v^L
—L~ ..i,.. )._ i
<&&
^==
/^^*~A?2=^
(
\
\s/\s
tHriiON wot
Max
'^
Unit
°C/W
sm*r
^MSHff
i i*s _xi
Oil
••_ Hii
<r» tJJ
!™
CAS t 21 1-07
MRMoO
±di;^
' j
_ njit i m»
«tH
IM
;j w ^
_,__.,_
PI
1-1
-JM..J*-
; i
L-* , Ml .Ul
m _^
„ JW_ _1BI_
ftft
_»(
FIGURE 1
30 MHz TEST CIRCUIT SCHEMATIC
_ J«_ J»t
ir» i tne
Ll
J
t
cs i
^ cs
C7 i A c«
13.1
v«
;
"tT!
j"J
« '
C4
RF
IftSllt
>
-f
i
j -U xJL_j
^^^^""^
i L
t /••
',
\
Ij
V
!
r
'u.~
1
Q
r
"4
1
1
a
i
# cz
L
' lit
^
IK
^t
I
'"
«om
u
i
a —
u-1!
10 pF.
ARCO 424
CI, C3. C4
- 170- 780 pF. ARCO 4«9
C5, CS — E
RIE 0.1
iLf A
100 V RED CAPS
ce—
1000
pf UNELCO. 350 V«
35 Vdc
Ri-toon
. 2.0 vv Carbon
LI —0 15 p
N Molded Choke MILLER
L2 — FERW3XCUBE. VK200 20 4B
L3 — 3 Tuf
IS. #14 Bare Tinned Wire. 0.3* (0.791 1.D x 0.38" 10.971 Long
u. #20 Enamel Wire. Close Wound on R1
L5-FERR 3XCUBE #56-570-IS/3B. 9 Ferrile Beads, on r Long #20 wire
InpuVOutput Connectors — Type N
Bo*rd-GIa» Teflon Mounted on
t V
« 4" « 2" 5EEZAK Bo.
X-N^,^^,^-^
oeaisortcwcTOUUKJWrVaMl
W
snui
m'Oina
ifu^in
*o«un»i
ff % . ~
T"tS
-|- "i:.«
r-5
-43-
"i"4j^?
' ™i "
; jj ,,
a
«•»•
.3
±E
^SL
MRF460A
.) . '« ' i
_ J
Hi?*T«
urn I m
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
MRF450, MRF450A
ELECTRICAL CHARACTERISTICS |T
C
=
2S°C
unte.soinerum nond.1
Ch*ract«ri*tie
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
fl
c
= 100mAdc. IB = 0)
Collector-Emitter Breakdown Voltage
"C • 20mAdc. V
B
E =01
Col lector- Bale Breakdown Voltage
ilC • 20mAdc. If - 01
Emitter Base Breakdown Volta»e
II
E
- lOmAdc, lc - 01
ON CHARACTERISTICS
DC Current Gain
(1C - VOAdc. VCE • 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Caoacitance
IV
C B
- 15 Vd£. IE
-O.I-
1.0 MHi)
FUNCTIONAL TESTS (Figura 1)
Commcn-Emitier Amplifier Powvar Gain
IV
C C
= 13.6 Vdc, P
OUI
- SOW. l
c
lm»xl -6.13Adc.f-30MH:)
Collector Efficiency
'V^c = 1 3 6 Vdt. P
out
- SOW, lf;(frtax) = 6.13 Adc. f = 30 MHz)
Sent! Equivalent Input Intpedance
IV
CC
- 13.6 Vdc. P
oul
. 50W:f-30MHz)
SsriBS Equivalent Output Impedance
IV
C
C- 13.6 Vdc. P
0ul
- SOW, f = 30MHz)
GPE
I
)
Symbol
I
•""
20
40
40
4.0
~
VCBRICEO
V
(BPICES
-
-
~
~
Vdc
Vdc
~
VIBRICBO
V(BRIEBO
"
Vdc
vac
~
HFE
10
-
-
-
Cob
-
~
200
—
_
r
pf
dS
%
11
50
~
"
15
*
1 56j8ft
~i
2out
"
Ohmt
174-) 50
"
Ohm,
FIGURE Z-INPUT POWER varwi OUTPUT POWER
FIGURE 3 - OUTTUT POWER "araji SUPPLY VOLTAGE
90
<**
^
^^ ^
. —•
?
m
fir,
Q?
^^^
= 3.5 W
f - 30 MM
I
0
'5
20
25
3,0
3.5
40
45
50
8.0
SO
10
11
12
13
14
f,n, INPUT POWER IVVATTSl
V
CC
. SUPPLY VOLTAGt IVOLTS]
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