tSs.mi-C.ondii.ckoi ^Pioaucki, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ413
MJ423
MJ431
Features
•
•
•
High Collector-Emitter Voltage V
CE
s=400V
DC Current Gain Specified 3.5A
High Frequency Response to 2.5 MHz
10 Amp
NPN Silicon
Power Transistors
125W
TO-3
E
Maximum Ratings
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance: 1.0°C/W junction to case
~l
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Device Dissipation @T
C
=25°C
Derate above 25°C
Figure 1 - Power Derating Curve
f
I
Symbol
VCEX
Max
400
400
5.0
10
2.0
125
1.0
Unit
K
T
*
I c
Vdc
Vdc
—»
VCB
V
EB
Ic
IB
PD
u —H
Vdc
Adc
Adc
Watts
H
v—i
1
1
—
J ^ . 4 . . !! i .
^ . | | . . j ^^
T.
V/A iA
is
,^^
BASE
EMITTER
COLLECTOR
G
t
B
t
w/°c
f ^
PIN1.
PIN 2.
CASE.
INCHES
—Q
DIMENSIONS
MM
DIM
.3
ra
A
8
C
D
E
G
H
K
L
N
Q
U
V
MIN
1.550
250
.038
0,55
.430
,215
.440
665
151
1.187
131
D.
I
MAX
REF
1.050
335
,043
0.70
BSC
BSC
,480
BSC
.830
165
BSC
188
MIN
39 37
6.35
0,97
1,40
MAX
REF
2667
NOTE
8.51
1,09
1,77
1092
BSC
5.46
BSC
1118 1 2 1 9
1689
384
30,15
333
BSC
21.08
419
BSC
[
4.77
(?)
150
50
100
Temperature °C
Power Dissipation (W) - Versus - Temperature °C
0
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ413, MJ423 & MJ431
Electrical Characteristics @ 25 °C Unless Otherwise Specified
Characteristic
Symbol
Min
325
Max
—
Unit
Vdc
mAdc
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
0
'
VCEO(SUS)
(|
c
=100mA, I
B
=0)
Collector Cutoff Current
ICEX
(V
C
E=400V, V
EB(
off)=1 .5V)
MJ41 3 MJ423
MJ431
(V
CE
=400V, V
EB(off)
=1 -5V,
MJ41 3 MJ423
T
C
=125°C)
MJ431
Emitter Cutoff Current
IEBO
(V
BE
=5.0Vdc, l
c
=0)
MJ413MJ423
MJ431
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
=0.5A, V
CE
=5.0V)
MJ413
(I
C
=1.0A, V
CE
=5.0V)
(I
C
=1.0A,V
CE
=5.0V)
MJ423
(I
C
=2.5A, V
CE
=5.0V)
(I
C
=2.5A, V
CE
=5.0V)
MJ431
(lc=3.0A, V
CE
=5.0V)
Collector-Emitter Saturation Voltage
VcE(sat)
(I
C
=0.5A, I
B
=0.05A)
MJ413
(I
C
=1.0A, I
B
=0.1A)
MJ423
(I
C
=2.5A, I
B
=0.5A)
MJ431
Base-Emitter Saturation Voltage
V
BE
(
sa
t)
(I
C
=0.5A, I
B
=0.05A)
MJ413
(I
C
=1.0A, I
B
=0.1A)
MJ423
(I
C
=2.5A, I
B
=0.5A)
MJ431
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
fr
(l
c
=200mA, V
CE
=10V, f=1.0MHz)
(1) Pulse Test: Pulse Width ^ 300 us, Duty Cycle i 2.0%
0.25
2.5
0.5
5.0
mAdc
5.0
2.0
20
15
30
10
15
10
80
90
35
Vdc
0.6
0.8
0.7
Vdc
1.25
1.25
1.50
MHz
2.5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
