, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ900 - MJ901 PNP
MJ1000 - MJ1001 NPN
COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas
transistors in monolithic Darlington configuration, and are mounted in
JEDEC TO-3 metal case. They are intended for use in power linear and
switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN
types are the MJ1000 and MJ1001 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
MJ900
Value
60
Unit
VCBO
Collector-Base Voltage
,
i MJ1001
MJ900
80
60
Vdc
VCEO
Collector-EmitterVoltage
; I
B
=0
!
;
M
j
901
MJ1001
MJ900
JMPPP
MJ901
MJ1001
MJ900
80
5.0
Vdc
VEBO
Emitter-Base Voltage
Vdc
Ic
Collector Current
' |
C
(RM8)
MJ901°
8.0
Adc
MJ1001
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
MJ900 - MJ901 PNP
MJ1000 - MJ1001 NPN
Symbol
Ratings
MJ900
IB
Value
Unit
Ba- Current
i @ T
c
< 25°
..JJWW
MJ1001
MJ900
0.1
90
0.515
Adc
Watts
W/°C
PT
Power Dissipation
K
'••-
t
-
I j^l^
Derate above MJ901
25°C
MJ1001
MJ900
MJ901
MJ1001
MJ900
MJ901°
MJ1001
Tj
Junction Temperature
-65 to +200
°C
T
s
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
MJ900
Thermal Resistance, Junction to Case
. • .
Mjyui
MJ1001
Value
1.94
Unit
°c/w
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
jJIJI",
IJJJIJ,
Min Typ MX
60
80
-
-
Unit
-
-
Vdc
l
c
=100 mAdc, I
B
=0
I,.
«
ICEO
Collector Cutoff Current
Vce=30Vdc,,
B
=0
Vc
E
=40Vdc,,e=0
-
Kflf)
-
MJ900 - MJ901 PNP
MJ1000 -MJ1001 NPN
Symbol
IEBO
Ratings
Emitter Cutoff Current
i
\.
Test Condition(s)
,„,,.„.
n
Min Typ MX
-
-
-
-
1.0
2.0
Unit
mAdc
VBE
=
5.0 VdC, lc
=
0
i MJ900
|MJ1000
:
MJ901
; MJ1001
UJj JiQOO
|
MJ1Q01
MJ900
MJ1000
V
CB
=60 V, R
BE
=1 .0 k ohm
Collector-Emitter Leakage
ICER
Current
V
CB
=80 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1 .0 k ohm,
Tc=150°C
mAdc
i V
CB
=80 V, R
BE
=1 .0 k ohm, | MJ901
jTc=150°C
|MJ1001
.
! lc=3.0 A, I
B
=12 mAdc
I MJ900
MJ1000
DM?™*
; MJ1UU1
j MJ900
_
-
_
-
5.0
2.0
\/Hn
V
.
Collector-Emitter saturation
, , ..
,
A
,
l
c
=8.0 A, I
B
=40 mAdc
CE(SAT)
•
M
j
901
MJ1001
-
-
4.0
Symbol
Ratings
Forward Voltage (pulse
method)
Test Condition(s)
MJ900
MJ1000
i MJ901
i MJ1001
MJ900
MJ1000
! MJ1001
MJ900
V
C
E=3.0 Vdc, l
c
=3.0 Adc
i —•—•?.
Min Typ MX
-
1.8
-
Unit
V
V
F
|
i
F
VBE
Base-Emitter Voltage (*)
:
lc=3.0AdC,VcE=3.0Vdc
, . . . . ..
, „.. .
|MJ9Q1
-
-
2.5
V
1000
-
-
FE
HP Piirrant
bain ( )
uo Current
Pain
t*\
l_!Y:__?_::_r_J,
MJQQQ
I V
CE
=3.0 Vdc, l
c
=4.0 Adc
| JJJJJJ°
IMJ1001
750
-
-
(*) Pulse Width » 300 ^s, Duty Cycle Z 2.0%
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