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30KP75

产品描述30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小273KB,共3页
制造商ETC2
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30KP75概述

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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30KP33 thru 30KP400CA
Transient Voltage Suppressor
Breakdown Voltage 33 to 400 V
Peak Pulse Power
30KW
Features
CASE: R-6
Breakdown Voltages (V
BR
) from 33 to 400V
30KW peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.05%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Band denotes cathode. Bidirectional not
marked.
Weight:
2.1g(Approximately)
25 C unless otherwise specified
O
Mechanical Data
Value
30
SEE TABLE1
7
1.61
17.5
77.5
-65 to +150
Unit
KW
A
W
W
℃/W
℃/W
Steady state power dissipation at T
L
=27.5℃ ,Lead lengths 0.375”(10mm)
P
M(AV)
R
θJL
R
θJA
T
J,
T
STG
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: 30KP33 thru 30KP400CA
Feb.29, 2012
www.smsemi.com
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