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SM05 THRU SM36

TVS Diode Array

PROTECTION PRODUCTS

Description

The SM series of transient voltage suppressors (TVS)

are designed to protect components which are

connected to data and transmission lines from voltage

surges caused by

ESD

(electrostatic discharge),

EFT

(electrical fast transients), and

lightning.

TVS diodes are characterized by their high surge

capability, low operating and clamping voltages, and

fast response time. This makes them ideal for use as

board level protection of sensitive semiconductor

components. The dual-junction common-anode design

allows the user to protect one bidirectional data line or

two unidirectional lines. The low profile SOT23

package allows flexibility in the design of crowded

circuit boards.

The SM series will meet the surge requirements of IEC

61000-4-2 (Formerly IEC 801-2), Level 4, Human

Body Model for air and contact discharge.

Features

u

300 watts peak pulse power (tp = 8/20µs)

u

Transient protection for data & power lines to

IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)

IEC 61000-4-4 (EFT) 40A (tp=5/50ns)

IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs)

Protects one bidirectional line or two unidirectional

lines

Working Voltages: 5V, 12V, 15V, 24 and 36V

Low clamping voltage

Solid-state silicon avalanche technology

u

Mechanical Characteristics

JEDEC SOT23 package

Molding compound flammability rating: UL 94V-0

Marking : Marking Code

Packaging : Tape and Reel per EIA 481

Applications

Cellular Handsets and Accessories

Portable Electronics

Industrial Controls

Set-Top Box

Servers, Notebook, and Desktop PC

Circuit Diagram

Schematic & PIN Configuration

SOT23 (Top View)

Revision 9/2000

1

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SM05 THRU SM36

PROTECTION PRODUCTS

Absolute Maximum Rating

R ating

Peak Pulse Pow er (tp = 8/20µ s)

Th ermal Resistance, Junction to A mb ient

Lead Sold ering Temp erature

Op erating Temp erature

Storage Temp erature

Symbo l

P

p k

q

JA

T

L

T

J

T

STG

Value

300

556

260 (10 sec.)

-55 to +125

-55 to +150

Units

Watts

°C/W

°C

Electrical Characteristics

SM05

Par ame te r

Reverse Stand -Off Voltage

Reverse Breakd ow n Voltage

Reverse Leakage Current

Clamp ing Voltage

Maximum Peak Pulse Current

Junction Cap acitance

Symbo l

V

RWM

V

BR

I

R

V

C

I

p p

C

j

C

j

I

t

= 1mA

V

RWM

= 5V, T=25°C

I

PP

= 1A ,

tp = 8/20µ s

Pi n 1 t o 2

V

R

= 0V, f = 1MHz

Pin 1 to 3 and

Pi n 2 t o 3

V

R

= 0V, f = 1MHz

6

20

9.8

17

350

400

Co nd itio ns

Minimum

Typ ical

Maximum

5

Units

V

µA

V

A

pF

SM12

Par ame te r

Reverse Stand -Off Voltage

Reverse Breakd ow n Voltage

Reverse Leakage Current

Clamp ing Voltage

Maximum Peak Pulse Current

Junction Cap acitance

Symbo l

V

RWM

V

BR

I

R

V

C

I

p p

C

j

C

j

I

t

= 1mA

V

RWM

= 12V, T=25°C

I

PP

= 1A ,

tp = 8/20µ s

Pi n 1 t o 2

V

R

= 0V, f = 1MHz

Pin 1 to 3 and

Pi n 2 t o 3

V

R

= 0V, f = 1MHz

13.3

1

19

12

120

150

Co nd itio ns

Minimum

Typ ical

Maximum

12

Units

V

µA

V

A

pF

ã

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SM05 THRU SM36

PROTECTION PRODUCTS

Electrical Characteristics

(Continued)

SM15

Par ame te r

Reverse Stand -Off Voltage

Reverse Breakd ow n Voltage

Reverse Leakage Current

Clamp ing Voltage

Maximum Peak Pulse Current

Junction Cap acitance

SM24

Par ame te r

Reverse Stand -Off Voltage

Reverse Breakd ow n Voltage

Reverse Leakage Current

Clamp ing Voltage

Maximum Peak Pulse Current

Junction Cap acitance

Symbo l

V

RWM

V

BR

I

R

V

C

I

p p

C

j

C

j

I

t

= 1mA

V

RWM

= 24V, T=25°C

I

PP

= 1A , tp = 8/20µ s

tp = 8/20µ s

Pi n 1 t o 2

V

R

= 0V, f = 1MHz

Pin 1 to 3 and 2 to 3

V

R

= 0V, f = 1MHz

26.7

1

43

5

50

60

Co nd itio ns

Minimum

Typ ical

Maximum

24

Units

V

µA

V

A

pF

Symbo l

V

RWM

V

BR

I

R

V

C

I

p p

C

j

C

j

Co nd itio ns

Minimum

Typ ical

Maximum

15

Units

V

I

t

= 1mA

V

RWM

= 15V, T=25°C

I

PP

= 1A , tp = 8/20µ s

tp = 8/20µ s

Pi n 1 t o 2

V

R

= 0V, f = 1MHz

Pin 1 to 3 and 2 to 3

V

R

= 0V, f = 1MHz

16.7

1

24

10

75

100

µA

V

A

pF

SM36

Par ame te r

Reverse Stand -Off Voltage

Reverse Breakd ow n Voltage

Reverse Leakage Current

Clamp ing Voltage

Maximum Peak Pulse Current

Junction Cap acitance

ã

2000 Semtech Corp.

Symbo l

V

RWM

V

BR

I

R

V

C

I

p p

C

j

C

j

Co nd itio ns

Minimum

Typ ical

Maximum

36

Units

V

I

t

= 1mA

V

RWM

= 36V, T=25°C

I

PP

= 1A , tp = 8/20µ s

tp = 8/20µ s

Pi n 1 t o 2

V

R

= 0V, f = 1MHz

Pin 1 to 3 and 2 to 3

V

R

= 0V, f = 1MHz

3

40

1

60

4

40

45

µA

V

A

pF

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SM05 THRU SM36

PROTECTION PRODUCTS

Typical Characteristics

Non-Repetitive Peak Pulse Power vs. Pulse Time

10

110

100

Power Derating Curve

Peak Pulse Power - P

PP

(kW)

90

% of Rated Power or I

PP

80

70

60

50

40

30

20

10

0

1

0.1

0.01

0.1

1

10

Pulse Duration - tp (µs)

100

1000

0

25

50

75

100

o

125

150

Ambient Temperature - T

A

( C)

Pulse Waveform

110

100

90

80

Percent of I

PP

70

60

50

40

30

20

10

0

5

10

15

Time (µs)

20

25

30

td = I

PP

/2

e

-t

Waveform

Parameters:

tr = 8µs

td = 20µs

ESD Pulse Waveform (Per IEC 61000-4-2)

Level

IEC 61000-4-2 Discharge Parameters

First

Peak

Current

(A)

1

2

3

4

7.5

15

22.5

30

Peak

Current

at 30 ns

(A)

4

8

12

16

Peak

Current

at 60 ns

(A)

8

4

6

8

Test

Voltage

(Contact

( A ir

Disch arge) Disch arge)

(kV )

2

4

6

8

2

4

8

15

ã

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SM05 THRU SM36

PROTECTION PRODUCTS

Applications Information

Device Connection Options

The SM series is designed to protect one bidirectional

or two unidirectional data or I/O lines operating at 5 to

36 volts. Connection options are as follows:

l

Device Schematic & Pin Configuration

l

Bidirectional:

Pin 1 is connected to the data line

and pin 2 is connected to ground (Since the device

is symmetrical, these connections may be re-

versed). For best results, the ground connection

should be made directly to a ground plane on the

board. The path length should be kept as short as

possible to minimize parasitic inductance. Pin 3 is

not connected.

Unidirectional:

Data lines are connected to pin 1

and pin 2. Pin 3 is connected to ground. For best

results, this pin should be connected directly to a

ground plane on the board. The path length should

be kept as short as possible to minimize parasitic

inductance.

RS-232 Transceiver Protection Example

Circuit Board Layout Recommendations for Suppres-

sion of ESD.

Good circuit board layout is critical for the suppression

of fast rise-time transients such as ESD. The following

guidelines are recommended (Refer to application note

SI99-01 for more detailed information):

l

Place the TVS near the input terminals or connec-

tors to restrict transient coupling.

Minimize the path length between the TVS and the

protected line.

Minimize all conductive loops including power and

ground loops.

The ESD transient return path to ground should be

kept as short as possible.

Never run critical signals near board edges.

Use ground planes whenever possible.

ã

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