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SM8LC12

产品描述800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小91KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

SM8LC12概述

800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

SM8LC12规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码SOD
包装说明PLASTIC, SO-8
针数8
Reach Compliance Codecompli
ECCN代码EAR99
Is SamacsysN
其他特性LOW CAPACITANCE
最小击穿电压13.3 V
最大钳位电压17.5 V
配置SEPARATE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G8
JESD-609代码e0
最大非重复峰值反向功率耗散500 W
元件数量4
端子数量8
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压12 V
表面贴装YES
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
SM8LC03
thru
SM8LC24
DESCRIPTION (500 watt)
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged
in an SO-8 configuration giving protection to 2 Bidirectional data or
interface lines. It is designed for use in applications where protection
is required at the board level from voltage transients caused by
electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical
fast transients (EFT) per IEC 1000-4-4 and effects of secondary
lighting.
These TVS arrays have a peak power rating of 500 watts for an
8/20µsec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, and I/O transceivers. The SM8LCXX product provides
board level protection from static electricity and other induced voltage surges that can damage sensitive
circuitry.
TVSarray™ Series
FEATURES
Protects up to 2 Bidirectional lines
Surge protection Per IEC 1000-4-2, IEC 1000-4-4
Provides electrically isolated protection
SO-8 Packaging
Low capacitance of 25 Pf per line pair
MECHANICAL
Molded SO-8 Surface Mount
Weight: 0.066 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by DOT on top of package
MAXIMUM RATINGS
Operating Temperatures: -55 C to +150 C
Storage Temperature: -55
0
C to +150
0
C
Peak Pulse Power: 500 Watts (8/20
µsec,
Figure 1)
Pulse Repetition Rate: <.01%
0
0
PACKAGING
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces (OPTIONAL)
Carrier tubes 95 pcs per (STANDARD)
ELECTRICAL CHARACTERISTICS PER LINE @ 25
0
C Unless otherwise specified
STAND
OFF
VOLTAGE
V
WM
VOLTS
MAX
SM8LC03
SM8LC05
SM8LC12
SM8LC15
SM8LC24
PGF
PGA
PGB
PGC
PGD
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(FIGURE 2)
VOLTS
MAX
7
9.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(FIGURE 2)
VOLTS
MAX
9
11
24
30
55
LEAKAGE
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
@0V
C
pF
TYP
25
25
25
25
25
TEMPERATURE
COEFFICIENT
OF V
BR
á
VBR
mV/°C
MAX
-5
1
8
11
28
PART
NUMBER
DEVICE
MARKING
NOTE:
TVS product is normally selected based on its stand off Voltage V
WM
. Product selected voltage
should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
Application:
The SM8LCXX product is designed for transient voltage suppression protection of ESD
sensitive components at the board level. It is an ideal product to be used for protection of I/O Transceivers.
MSC0333A.PDF
ISO 9001 CERTIFIED
REV N 7/07/2000

SM8LC12相似产品对比

SM8LC12 SM8LC24 SM8LC05 SM8LC03 SM8LC15
描述 800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 800 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
是否无铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi
零件包装代码 SOD SOD SOD SOD SOD
包装说明 PLASTIC, SO-8 R-PDSO-G8 PLASTIC, SO-8 PLASTIC, SO-8 PLASTIC, SO-8
针数 8 8 8 8 8
Reach Compliance Code compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE
最小击穿电压 13.3 V 26.7 V 6 V 4 V 16.7 V
最大钳位电压 17.5 V 43 V 9.8 V 7 V 24 V
配置 SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e0 e0 e0 e0
最大非重复峰值反向功率耗散 500 W 500 W 500 W 500 W 500 W
元件数量 4 4 4 4 4
端子数量 8 8 8 8 8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 12 V 24 V 5 V 3.3 V 15 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is Samacsys N - N N N
Base Number Matches 1 - 1 1 1
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