VSK.105..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 105 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 V
RMS
isolating voltage
• Totally lead (Pb)-free
ADD-A-PAK
TM
RoHS
COMPLIANT
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
or I
F(AV)
105 A
BENEFITS
• Up to 1600 V
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al
2
0
3
DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK
TM
modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread.
The Generation 5 of AAP modules is manufactured without
hard mold, eliminating in this way any possible direct stress
on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
or I
F(AV)
I
O(RMS)
I
TSM,
I
FSM
I
2
t
I
2
√t
V
RRM
T
Stg
T
J
Range
CHARACTERISTICS
85 °C
As AC switch
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
105
235
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 150
- 40 to 130
kA
2
s
kA
2
√s
V
°C
A
UNITS
Document Number: 94416
Revision: 04-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.105..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
IRK.105
10
12
14
16
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
20
I
RRM,
I
DRM
AT 130 °C
mA
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 105 A
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
SYMBOL
I
T(AV)
I
F(AV)
I
O(RMS)
t = 10 ms
t = 8.3 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t for fusing
I
2
t
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1)
I
2
t for time t = I
2
√t
x
√t
x
x
(2)
Average power = V
2
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
I
2
√t
(1)
V
T(TO) (2)
r
t (2)
V
TM
V
FM
dI/dt
I
H
I
L
TEST CONDITIONS
180° conduction, half sine wave,
T
C
= 85 °C
or
VALUES
105
UNITS
I
(RMS)
I
(RMS)
235
A
No voltage
reapplied
100 % V
RRM
reapplied
1785
Sinusoidal
half wave,
initial T
J
= T
J
maximum
1870
1500
1570
2000
2100
15.91
Initial T
J
= T
J
maximum
14.52
11.25
10.27
20.00
18.30
159.1
0.80
0.85
2.37
2.25
1.64
150
250
400
T
J
= 25 °C, no voltage reapplied
No voltage
reapplied
100 % V
RRM
reapplied
kA
2
s
T
J
= 25 °C, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Low level
(3)
High level
(4)
Low level
(3)
High level
(4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= 25 °C
kA
2
√s
V
mΩ
V
A/µs
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
(3)
(4)
mA
16.7 % x
π
x I
AV
< I <
π
x I
AV
I>
π
x I
AV
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 04-Jul-08
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
Generation 5 Power Modules), 105 A
(ADD-A-PAK
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= - 40 °C
Maximum gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
Maximum gate current required to trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
12
3
3
10
4.0
2.5
1.7
270
150
80
0.25
6
V
mA
mA
V
UNITS
W
A
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
RMS insulation voltage
Maximum critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
(1)
TEST CONDITIONS
T
J
= 130 °C, gate open circuit
50 Hz, circuit to base, all terminals shorted
T
J
= 130 °C, linear to 0.67 V
DRM
, gate open circuit
VALUES
20
2500 (1 min)
3500 (1 s)
500
UNITS
mA
V
V/µs
Note
(1)
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT105/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum internal thermal resistance,
junction to case per module
Typical thermal resistance,
case to heatsink
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 130
- 40 to 150
0.135
K/W
0.1
5
Nm
3
110
4
TO-240AA
g
oz.
UNITS
°C
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSK.105
SINE HALF WAVE CONDUCTION
180°
0.04
120°
0.05
90°
0.05
60°
0.08
30°
0.12
180°
0.03
RECTANGULAR WAVE CONDUCTION
120°
0.05
90°
0.06
60°
0.08
30°
0.12
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94416
Revision: 04-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.105..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 105 A
Maximum Average On-state Power Loss (W)
200
180
160
140
120
DC
180°
120°
90°
60°
30°
Maximum Allowable Cas T
e emperature (°C)
130
120
110
VSK.105.. S
eries
R
thJC
(DC) = 0.27 K/ W
Conduction Angle
100
90
80
70
0
20
40
60
80
100
120
Average On-state Current (A)
MS
100 R Limit
80
60
40
20
0
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
VSK.105.. S
eries
Per Junction
T
J
= 130°C
Conduction Period
30°
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Peak Half S Wave On-state Current (A)
ine
130
VSK.105.. S
eries
R
(DC) = 0.27 K/ W
120
110
Conduction Period
thJC
1600
1500
1400
1300
1200
1100
1000
900
800
700
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T
J
= 130°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
100
90
80
70
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
30°
60°
90°
120°
180°
DC
VSK.105.. S
eries
Per Junction
10
100
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
140
120
100
80
60
180°
120°
90°
60°
30°
R Limit
MS
Peak Half S Wave On-state Current (A)
ine
160
1800
1600
1400
1200
1000
800
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Maintained.
Initial T = 130°C
J
No Volta ge Reapp lied
Rated V
RRM
Reapp lied
Conduction Angle
40
20
0
0
20
40
60
80
100
120
Average On-state Current (A)
VSK.105.. S
eries
Per Junction
T
J
= 130°C
VSK.105.. S
eries
Per Junction
0.1
Pulse T
rain Duration (s)
1
600
0.01
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 04-Jul-08
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
Generation 5 Power Modules), 105 A
(ADD-A-PAK
350
Maximum T l On-state Power Loss (W)
ota
R
th
=
SA
300
250
200
150
Conduction Angle
180°
120°
90°
60°
30°
0.
3
0.5
K/
W
0. 7
100
50
0
K/ W
1K
/W
VSK.105.. S
eries
2
K/ W
Per Mod ule
T
J
= 130°C
2
0.
1
0.
K/
W
W
K/
W
K/
ta
el
-D
R
0
40
80
120
160
200
240
0
20
40
60
80
100
120
140
T
otal RMS Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - On-State Power Loss Characteristics
600
R
t
Maximum T
otal Power Loss (W)
500
400
300
200
100
0
0
40
80
180°
(S
ine)
180°
(Rec t)
0.
2K
/W
0.
3
K/
W
A
hS
=
1
0.
W
K/
ta
el
-D
R
0. 5
2 x VSK.105.. S
eries
S
ingle Phase Bridge
Connec ted
T
J
= 130°C
120
160
K/ W
0.7
K/ W
1KW
/
2 K/ W
0
200
20
40
60
80
100
120
140
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 8 - On-State Power Loss Characteristics
900
Maximum T
otal Power Loss (W)
800
R
700
600
500
400
300
200
100
0
0
40
80
120
160
200
240
280
0
3 x VSK.105.. S
eries
T
hree Phase Bridge
Connec ted
T
J
= 130°C
120°
(R
ect)
th
SA
=
0.
1
K/
W
0.2
K/
W
0.3
K/ W
0.5
1 K/
-D
el
ta
R
K/ W
W
20
40
60
80
100
120
140
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94416
Revision: 04-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
