S9015
S9015
PNP Transistors
General description
SOT-23 Plastic-Encapsulate Transistors
FEATURES
•
Complementary to S9014
•
Power Dissipation of 200mW
•
High Stability and High Reliability
MECHANICAL DATA
•
SOT-23 Small Outline Plastic Package
•
Epoxy UL: 94V-0
•
Mounting Position: Any
Marking: M6
Maximum Ratings & Thermal Characteristics
Parameters
Collector-Base Voltage
Collector-Emitter Voltage
Emitter -Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal resistance From junction to ambient
T
A
= 25° unless otherwise noted
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
R
θJA
Value
-50
-45
-5
-100
200
150
-55-+150
625
Unit
V
V
V
mA
mW
℃
℃
℃/W
Electrical Characteristics
Parameter
T
A
= 25° unless otherwise noted
C
Symbols
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test Condition
I
C
=-100uA, I
E
=0
I
C
=-0.1mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V, I
C
=-10mA,f=30MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE(1)
Limits
Min
Max
-50
-45
-5
-100
-100
200
1000
-0.30
-1.00
150
Unit
V
V
V
nA
nA
V
V
MHz
Typical characteristics
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S9015
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