SMDA05C-7 THRU SMDA24C-7
PROTECTION PRODUCTS
Description
The SMDAxxC-7 series of transient voltage suppres-
sors are designed to protect components which are
connected to data and transmission lines from voltage
surges caused by ESD (electrostatic discharge), EFT
(electrical fast transients), and lightning.
TVS diodes are characterized by their high surge
capability, low operating and clamping voltages, and
fast response time. This makes them ideal for use as
board level protection of sensitive semiconductor
components. The SMDAxxC-7 is designed to provide
transient suppression on multiple data lines and I/O
ports. The low profile SO-8 design allows the user to
protect up to seven data and I/O lines with one pack-
age.
The SMDAxxC-7 TVS diode array will meet the surge
requirements of IEC 61000-4-2 (Formerly IEC 801-2),
Level 4, Human Body Model for air and contact
discharge.
Bidirectional TVS Array
for Protection of Seven Lines
Features
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Transient protection for data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 12A (8/20µs)
Small SO-8 surface mount package
Protects seven I/O lines
Working voltages: 5V, 12V, 15V and 24V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
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Mechanical Characteristics
JEDEC SO-8 package
Molding compound flammability rating: UL 94V-0
Marking : Part number, date code, logo
Packaging : Tube or Tape and Reel per EIA 481
Applications
RS-232 & RS-422 Data Lines
Microprocessor Based Equipment
LAN/WAN Equipment
Notebooks, Desktops, & Servers
Instrumentation
Peripherals
Set Top Box
Serial and Parallel Ports
Schematic & PIN Configuration
SO-8 (Top View)
Revision 9/2000
1
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SMDA05C-7 THRU SMDA24C-7
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Pow er (tp = 8/20µs)
Lead Soldering Temp erature
Op erating Temp erature
Storage Temp erature
Symbo l
P
p k
T
L
T
J
T
STG
Value
300
260 (10 sec.)
-55 to +125
-55 to +150
Units
Watts
°C
°C
°C
Electrical Characteristics
SMDA05C-7
Par ame te r
Reverse Stand-Off Voltage
Reverse Breakdow n Voltage
Reverse Leakage Current
Clamp ing Voltage
Maximum Peak Pulse Current
Junction Cap acitance
Symbo l
V
RWM
V
BR
I
R
V
C
I
PP
C
j
I
t
= 1mA
V
RWM
= 5V, T=25°C
I
PP
= 1A, tp = 8/20µs
tp = 8/20µs
Betw een I/O Pins and
Gnd
V
R
= 0V, f = 1MHz
6
20
9.8
17
350
Co nd itio ns
Minimum
Typ ical
Maximum
5
Units
V
V
µA
V
A
pF
SMDA12C-7
Par ame te r
Reverse Stand-Off Voltage
Reverse Breakdow n Voltage
Reverse Leakage Current
Clamp ing Voltage
Maximum Peak Pulse Current
Junction Cap acitance
Symbo l
V
RWM
V
BR
I
R
V
C
I
PP
C
j
I
t
= 1mA
V
RWM
= 12V, T=25°C
I
PP
= 1A, tp = 8/20µs
tp = 8/20µs
Betw een I/O Pins and
Gnd
V
R
= 0V, f = 1MHz
13.3
1
19
12
120
Co nd itio ns
Minimum
Typ ical
Maximum
12
Units
V
V
µA
V
A
pF
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SMDA05C-7 THRU SMDA24C-7
PROTECTION PRODUCTS
Electrical Characteristics
(Continued)
SMDA15C-7
Par ame te r
Reverse Stand -Off Voltage
Reverse Breakd ow n Voltage
Reverse Leakage Current
Clamp ing Voltage
Maximum Peak Pulse Current
Junction Cap acitance
Symbo l
V
RWM
V
BR
I
R
V
C
I
PP
C
j
I
t
= 1mA
V
RWM
= 15V, T=25°C
I
PP
= 1A , tp = 8/20µ s
tp = 8/20µ s
Betw een I/O Pins and
Gnd
V
R
= 0V, f = 1MHz
16.7
1
24
10
75
Co nd itio ns
Minimum
Typ ical
Maximum
15
Units
V
V
µA
V
A
pF
SMDA24C-7
Par ame te r
Reverse Stand-Off Voltage
Reverse Breakdow n Voltage
Reverse Leakage Current
Clamp ing Voltage
Maximum Peak Pulse Current
Junction Cap acitance
Symbo l
V
RWM
V
BR
I
R
V
C
I
PP
C
j
I
t
= 1mA
V
RWM
= 24V, T=25°C
I
PP
= 1A, tp = 8/20µs
tp = 8/20µs
Betw een I/O Pins and
Gnd
V
R
= 0V, f = 1MHz
26.7
1
43
5
50
Co nd itio ns
Minimum
Typ ical
Maximum
24
Units
V
V
µA
V
A
pF
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SMDA05C-7 THRU SMDA24C-7
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110
100
Peak Pulse Power - P
PP
(kW)
90
% of Rated Power or I
PP
80
70
60
50
40
30
20
10
0.01
0.1
1
10
Pulse Duration - tp (µs)
100
1000
0
0
25
50
75
100
o
Power Derating Curve
1
0.1
125
150
Ambient Temperature - T
A
( C)
Pulse Waveform
110
100
90
80
Percent of I
PP
70
60
50
40
30
20
10
0
0
5
10
15
Time (µs)
20
25
30
td = I
PP
/2
e
-t
Waveform
Parameters:
tr = 8µs
td = 20µs
ESD Pulse Waveform (IEC 61000-4-2)
Level
IEC 61000-4-2 Discharge Parameters
First
Peak
Current
(A)
1
2
3
4
7.5
15
22.5
30
Peak
Current
at 30 ns
(A)
4
8
12
16
Peak
Current
at 60 ns
(A)
8
4
6
8
Test
Test
Voltage
Voltage
(Contact
( A ir
Disch arge) Disch arge)
(kV )
(kV )
2
4
6
8
2
4
8
15
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SMDA05C-7 THRU SMDA24C-7
PROTECTION PRODUCTS
Applications Information
Device Connection for Protection of Seven Data Lines
The SMDAxxC-7 is designed to protect up to 7 data or
I/O lines. They are bidirectional devices and may be
used on lines where the signal polarities are above and
below ground.
The SMDAxxC-7 TVS arrays employ a monolithic struc-
ture. Therefore, the working voltage (V
RWM
) and break-
down voltage (V
BR
) specifications apply to the differen-
tial voltage between any two data line pins. For ex-
ample, the SMDA24C-7 is designed for a maximum
voltage excursion of +/-12V between any two data
lines.
The device is connected as follows:
l
Circuit Diagram
Connection Diagram
DATA IN
DATA OUT
Pins 1, 2, 3, 4, 5, 6 and 7 are connected to the
lines that are to be protected. Pin 8 is connected
to ground. The ground connections should be
made directly to the ground plane for best results.
The path length is kept as short as possible to
reduce the effects of parasitic inductance in the
board traces.
8
7
6
5
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
l
l
l
l
l
l
1
2
3
4
Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
DATA IN
DATA OUT
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