TSMF3700
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSMF3700 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology in
a miniature PL-CC-2 SMD package.
It has been designed to meet the increasing demand
on optoelectronic devices for surface mounting.
The package consists of a lead frame which is sur-
rounded with a white thermoplast. The reflector inside
the package is filled up with clear epoxy.
94 8553
Features
•
•
•
•
•
•
•
•
•
•
•
•
SMT IRED with extra high radiant power
Low forward voltage
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wavesolder
process
Available in 8 mm tape
Suitable for pulse current operation
Extra wide angle of half intensity
ϕ
= ± 60°
Peak wavelength
λ
p
= 870 nm
High reliability
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared source in tactile keyboards
IR diode in low space applications
High performance PCB mounted infrared sensors
High power infrared emitter for miniature light barriers
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
≤
10 sec
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1
160
100
- 55 to + 100
- 55 to + 100
260
450
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81032
Rev. 1.4, 08-Mar-05
www.vishay.com
1
TSMF3700
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction capacitance
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
V
F
TK
VF
I
R
C
j
160
Min
Typ.
1.4
2.4
- 1.7
10
Max
1.7
Unit
V
V
mV/K
µA
pF
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Radiant Intensity
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
Virtual Source Diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Symbol
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
∆λ
TKλ
p
t
r
t
f
∅
Min
5
Typ.
7
60
32
- 0.8
± 60
870
40
0.2
30
30
0.5
Max
25
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
250
P - Power Dissipation ( mW )
V
125
I
F
- Forward Current ( mA )
200
100
150
R
thJA
100
75
R
thJA
50
50
0
0
20
40
60
80
100
25
0
0
20
40
60
80
100
94 8029
T
amb
- Ambient Temperature (
°C
)
94 7916
T
amb
- Ambient Temperature (
°C
)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81032
Rev. 1.4, 08-Mar-05
TSMF3700
Vishay Semiconductors
10000
I
F
- Forward Current ( mA )
100
t
p
/T = 0.005
0.01
0.02
0.05
I
e
- Radiant Intensity ( mW/sr )
T
amb
< 60°C
1000
10
100
0.2
0.5
DC
1
10
0.1
1
0.01
95 9985
0.1
1
10
100
15903
0.1
10
0
t
p
- Pulse Length ( ms )
10
1
10
2
10
3
I
F
- Forward Current ( mA )
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
10
4
I
F
- Forward Current ( mA)
Φ
e
- Radiant Power ( mW )
1000
10
3
100
10
2
10
10
1
1
10
0
0
94 8880
1
2
3
4
15902
0.1
10
0
V
F
- Forward Voltage ( V )
10
1
10
2
10
3
I
F
- Forward Current ( mA )
10
4
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
V
Frel
- Relative Forward Voltage
1.6
1.1
I
e rel
;
Φ
e rel
1.2
I
F
= 10 mA
I
F
= 20 mA
0.8
1.0
0.9
0.4
0.8
0.7
0
20
40
60
80
100
94 7993
0
-10 0 10
50
100
140
94 7990
T
amb
- Ambient Temperature (
°
C )
T
amb
- Ambient Temperature (
°
C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81032
Rev. 1.4, 08-Mar-05
www.vishay.com
3
TSMF3700
Vishay Semiconductors
0°
1.25
Φ
e rel
- Relative Radiant Power
I
e rel
- Relative Radiant Intensity
10°
20°
30°
1.0
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
0.75
0.5
0.25
I
F
= 100 mA
0
820
870
λ
-
Wavelength ( nm )
920
15821
94 8013
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Package Dimensions in mm
3.5 ± 0.2
+ 0.10
1.65- 0.05
technical drawings
according to DIN
specifications
0.85
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4
1.6 (1.9)
∅
2.4
3
+ 0.15
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
www.vishay.com
4
4
Document Number 81032
Rev. 1.4, 08-Mar-05
TSMF3700
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81032
Rev. 1.4, 08-Mar-05
www.vishay.com
5
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