TSDF2005W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low current, low–noise applications, such as in RF
front–ends, in analogue and digital cellular and
cordless phones,in analogue and digital TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
D
Very low noise figure
D
Very high power gain
D
High transition frequency f
T
= 25 GHz
D
Low feedback capacitance
D
Emitter pins are thermal leads
1
2
4
3
TSDF2005W Marking: YH2
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
16712
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
µm
Cu
T
amb
132
°C
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
R
thJA
Value
10
3.5
1.5
12
40
150
–65 to +150
450
Unit
V
V
V
mA
mW
°C
°C
K/W
Document Number 85085
Rev. 3, 02–May–02
www.vishay.com
1 (4)
TSDF2005W
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 5 V, V
BE
= 0
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 5 mA, I
B
= 0.5 mA
V
CE
= 2 V, I
C
= 20 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
50
3.5
0.1
100
0.25
150
Min.
Typ.
Max.
100
100
1
Unit
µA
nA
µA
V
V
Electrical AC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Emitter-base capacitance
Noise figure
Power gain,
maximum stable gain
Transducer gain
Third order intercept point
at output
1 dB compression point
*) G
ms
= | S
21e
/S
12e
|
Test Conditions
V
CE
= 2 V, I
C
= 10 mA, f = 1 GHz
V
CB
= 2 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
, f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
F
Min.
Typ.
25
0.05
0.3
0.3
1.2
21
14
17
15
5
0.08
Max.
Unit
GHz
pF
pF
pF
dB
dB
dB
dBm
dBm
Collector-emitter capacitance V
CE
= 2 V, f = 1 MHz
V
CE
= 2 V, I
C
= 5 mA,
G
pe
= G
ms
*)
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA,
Z
S
= Z
L
= 50
Ω,
f = 2 GHz
V
CE
= 2 V, I
C
= 10 mA,
Z
S
= Z
L
= 50
Ω,
f = 2 GHz
V
CE
= 2 V, I
C
= 10 mA,
Z
S
= Z
L
= 50
Ω,
f = 2 GHz
| S
21e
|
2
IP
3
P
–1dB
www.vishay.com
2 (4)
Document Number 85085
Rev. 3, 02–May–02
TSDF2005W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay
Semiconductors
products for any unintended or unauthorized application, the
buyer shall indemnify Vishay
Semiconductors
against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85085
Rev. 3, 02–May–02
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