b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74641
S-71687-Rev. A, 13-Aug-07
SUP90N06-5m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10 thru 7 V
120
g
fs
- Transconductance (S)
150
T
C
= - 55 °C
100
I
D
- Drain Current (A)
80
90
T
C
= 25 °C
60
6V
40
60
T
C
= 125 °C
20
30
0
0
1
2
3
4
5
0
0
12
24
36
48
60
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
100
0.05
Transconductance
I
D
= 20 A
r
DS(on)
- On-Resistance (Ω)
80
I
D
- Drain Current (A)
0.04
60
0.03
40
T
C
= 125 °C
T
C
= 25 °C
0.02
20
0.01
T
A
= 150 °C
T
C
= - 55 °C
0
0
2
4
6
8
10
0
4
5
6
T
A
= 25 °C
8
9
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
0.0044
9000
On-resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (Ω)
0.0042
C - Capacitance (pF)
7200
C
iss
5400
0.0040
V
GS
= 10 V
0.0038
3600
C
oss
0.0036
1800
0.0034
0
20
40
60
80
100
0
0
C
rss
12
24
36
48
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 74641
S-71687-Rev. A, 13-Aug-07
Capacitance
www.vishay.com
3
SUP90N06-5m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
I
D
= 20 A
1.7
r
DS(on)
- On-Resistance
V
GS(th)
Variance (V)
V
GS
= 10 V
(Normalized)
1.4
0.2
0.8
- 0.4
I
D
= 5 mA
- 1.0
1.1
0.8
- 1.6
I
D
= 250
µA
0.5
- 50
- 25
0
25
50
75
100
125
150
175
- 2.2
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
10
I
D
=
85
A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
=
30
V
V
DS
= 20 V
6
V
DS
= 40 V
V
(BR)VDSS
(normalized)
74
72
70
68
66
64
62
60
0
0
22
44
66
88
110
58
- 50
I
D
= 1 mA
Threshold Voltage
4
2
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
185
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150 °C
T
J
= 25 °C
I
D
- Drain Current (A)
148
1
111
Package Limited
74
0.1
0.01
37
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Source-Drain Diode Forward Voltage
Maximum Drain Current vs. Case Temperature
www.vishay.com
4
Document Number: 74641
S-71687-Rev. A, 13-Aug-07
SUP90N06-5m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
*Limited
by
r
DS(on)
100
T
J
= 25 °C
I
D
- Drain Current (A)
I
DAV
(A)
T
J
= 150 °C
10
10
1 ms
10 ms
100 ms
DC
1
T
C
= 25 °C
Single
Pulse
1
10
-5
0.1
0.1
*V
GS
10
-4
10
-3
10
-2
10
-1
1
t
AV
(sec)
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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