SUM60N10-17
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
(Ω)
0.0165 at V
GS
= 10 V
0.019 at V
GS
= 6 V
I
D
(A)
60
56
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFETS
175 °C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized for Fast Switching
RoHS
COMPLIANT
APPLICATIONS
• Isolated DC/DC converters
- Primary-Side Switch
D
TO-263
G
G
D S
S
Top View
Ordering Information:
SUM60N10-17-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
b
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
DM
I
AS
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
d
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
60
a
34
a
100
40
80
150
c
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
www.vishay.com
1
PCB Mount
(TO-263)
d
Symbol
R
thJA
R
thJC
Limit
40
1.0
Unit
°C/W
SUM60N10-17
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 6 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min.
100
2
Typ.
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
100
0.013
0.015
0.0165
0.019
0.031
0.041
25
4300
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 30 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
175
65
100
pF
V
DS
= 50 V, V
GS
= 10 V, I
D
= 60 A
25
19
1.5
15
25
20
45
15
60
100
nC
Ω
V
DD
= 50 V, R
L
= 1.5
Ω
I
D
≅
60 A, V
GEN
= 10 V, R
G
= 2.5
Ω
12
30
10
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
A
V
ns
A
µC
I
F
= 30 A, V
GS
= 0 V
I
F
= 50 A, dI/dt = 100 A/µs
1.0
125
8
0.5
1.5
200
12
1.2
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 72070
S-81224-Rev. B, 02-Jun-08
SUM60N10-17
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10 thru 7 V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
100
120
80
80
60
60
40
5V
20
4V
0
0
2
4
6
8
10
40
T
C
= 125 °C
20
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
160
T
C
= - 55 °C
g
fs
- Transconductance (S)
120
25 °C
R
DS(on)
- On-Resistance (Ω)
0.020
0.025
Transfer Characteristics
0.015
V
GS
= 10 V
125 °C
80
0.010
40
0.005
0
0
15
30
45
60
75
90
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
6000
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
5000
C
iss
C - Capacitance (pF)
4000
16
V
DS
= 50 V
I
D
= 60 A
12
3000
8
2000
1000
C
rss
4
C
oss
0
0
20
40
60
80
100
0
0
30
60
90
120
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
Gate Charge
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3
SUM60N10-17
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.5
V
GS
= 10 V
I
D
= 30 A
2.0
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
100
(Normalized)
1.5
10
T
J
= 150 °C
T
J
= 25 °C
1.0
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
130
I
D
= 10 A
125
R
DS(on)
- On-Resistance
120
(Normalized)
115
110
105
100
95
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
SUM60N10-17
Vishay Siliconix
THERMAL RATINGS
80
1000
Limited
by R
DS(on)
*
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
10 µs
100 µs
10
1 ms
10 ms
1
T
C
= 25 °C
Single Pulse
100 ms
DC
40
20
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
1000
T
C
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?72070.
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
www.vishay.com
5
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