SUD50N024-09P
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
24
c
FEATURES
I
D
(A)
d
49
36
D
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized for High Efficiency
APPLICATIONS
D
High-Side Synchronous Buck DC/DC
Conversion
−
Desktop
−
Server
TO-252
Drain Connected to Tab
G
D
S
G
Top View
S
Ordering Information: SUD50N024-09P
SUD50N024-09P—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
C
= 25_C
L = 0.1 mH
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS(pulse)
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
24
C
22
"20
49d
34
d
100
4.3
29
42
6.5
a
39.5
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
c. Pulse condition: T
A
= 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
1
SUD50N024-09P
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
15
0.0135
50
0.008
0.0095
0.014
0.017
S
W
22
0.8
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
1.6
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
1300
470
275
4.0
10.5
4.2
4.0
8
10
25
12
12
15
40
20
ns
6
16
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
V
GS
= 10 thru 6 V
80
I D
−
Drain Current (A)
5V
I D
−
Drain Current (A)
80
25_C
60
125_C
40
100
T
C
=
−55_C
Transfer Characteristics
60
4V
40
20
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
20
0
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
2
SUD50N024-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
60
T
C
=
−55_C
25_C
125_C
r DS(on)
−
On-Resistance (
W
)
50
g fs
−
Transconductance (S)
40
30
20
10
0
0
10
20
30
40
50
0.025
V
GS
= 4.5 V
0.020
0.015
0.010
0.005
0.000
0
20
40
60
80
100
V
GS
= 10 V
0.030
On-Resistance vs. Drain Current
I
D
−
Drain Current (A)
2000
I
D
−
Drain Current (A)
10
V
DS
= 10 V
I
D
= 50 A
Capacitance
Gate Charge
1600
C
−
Capacitance (pF)
C
iss
1200
V GS
−
Gate-to-Source Voltage (V)
8
6
800
C
oss
400
C
rss
0
0
4
8
12
16
20
V
DS
−
Drain-to-Source Voltage (V)
4
2
0
0
4
8
12
16
20
Q
g
−
Total Gate Charge (nC)
1.8
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I S
−
Source Current (A)
Source-Drain Diode Forward Voltage
T
J
= 150_C
10
T
J
= 25_C
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
3
SUD50N024-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
25
1000
Limited
by r
DS(on)
100
I D
−
Drain Current (A)
Safe Operating Area
20
I D
−
Drain Current (A)
10, 100
ms
1 ms
10 ms
100 ms
1s
10 s
100 s
dc
15
10
10
1
5
0.1
T
A
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
