This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise note)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 150 ° C
V
DS
½
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 10 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 10 A, T
J
= 150 °C
V
GS
= - 4.5 V, I
D
= - 5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
F
= - 19 A, V
GS
= 0 V
I
F
= - 19 A, di/dt = 100 A/µs
-1
41
V
DD
= - 30 V, R
L
= 3
I
D
- 19 A, V
GEN
= - 10 V, R
g
= 2.5
f = 1 MHz
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 10 A
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
1140
130
90
26
4.5
7
7
8
9
65
30
15
15
100
45
ns
40
nC
1710
pF
g
fs
V
DS
= - 15 V, I
D
= - 10 A
0.061
22
- 30
0.048
0.060
0.102
0.120
0.077
S
- 60
-1
-3
± 100
-1
- 50
- 125
A
µA
V
V
nA
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Drain-Source Body Diode and Characteristics
(T
C
= 25 °C)
b
- 30
- 30
- 1.5
61
A
V
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 thru 5
V
25
I
D
- Drain Current (A)
4
V
I
D
- Drain Current (A)
25
30
20
20
15
15
10
3
V
10
T
C
= 125 °C
5
25 °C
- 55 °C
5
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
35
30
g fs - Transconductance (S)
25
20
15
10
5
0
0
5
10
15
20
25
30
125 °C
T
C
= - 55 °C
25 °C
RDS(on) - On-Resistance (Ω)
0.12
Transfer Characteristics
0.10
0.08
V
GS
= 4.5
V
0.06
V
GS
= 10
V
0.04
0.02
0.00
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
GS
- Gate-to-Source
Voltage
(V)
Transconductance
1800
20
On-Resistance vs. Drain Current
V
GS - Gate-to-Source
Voltage
(V)
1500
C - Capacitance (pF)
C
iss
16
V
DS
= 30
V
I
D
= 10 A
1200
12
900
8
600
300
C
rss
0
10
4
C
oss
0
0
20
30
40
50
60
0
10
20
30
40
50
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?69253.
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Analog Devices, Inc.(ADI)近日宣布日立公司(Hitachi)在其最新的消费类无线传输集线器TP-WL700H中使用ADI公司的Advantiv高级电视解决方案IC，以提供高端的无线功能、灵活性和无缝高清(HD)连接。这款TP-WL700H集线器仅在日本市场供应，它是一款单机设备，专门用于为日立Wooo UT系列液晶电视提供无线高清娱乐内容。在日立公司最新的无线视频集线...[详细]
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
