SMBJ3V3
New Product
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Unidirectional polarity only
• Peak pulse power: 600 W (10/1000 µs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-214AA (SMBJ)
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
P
PPM
I
FSM
T
j
max.
3.3 V
600 W
60 A
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
(1,2)
Peak pulse current with a 10/1000
μs
waveform (see Fig. 1)
Peak pulse current with a 8/20 waveform (see Fig. 1)
Non repetitive peak forward surge current 8.3 ms single half sine-wave
(2)
Power dissipation on infinite heatsink, T
L
= 75 °C
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
PPM
I
FSM
P
M(AV)
T
J
, T
STG
VALUE
600
50
200
60
5
- 65 to + 175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
V
(BR)
AT I
T
MIN
V
SMBJ3V3
KC
4.1
mA
1.0
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
AT V
WM
MAX
µA
200
V
3.3
MAXIMUM
CLAMPING
VOLTAGE
V
C
AT I
PPM
10/1000 µs
V
7.3
A
50
V
10.3
MAXIMUM
CLAMPING
VOLTAGE
V
C
AT I
PPM
8/20 µs
A
200
(%/°C)
- 5.3
TYPICAL
TYPICAL
TEMP.
JUNCTION
COEFFICIENT CAPACITANCE
OF V
(BR)
C
J
AT 0 V,
1 MHz
pF
5200
www.vishay.com
1
DEVICE
TYPE
DEVICE
MARKING
CODE
Document Number 88940
08-Sep-06
SMBJ3V3
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
(1)
(2)
SYMBOL
R
θJL
R
θJA
VALUE
20
100
UNIT
°C/W
Typical thermal resistance, junction to ambient
Note:
(1) Thermal resistance from junction to lead - Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout
ORDERING INFORMATION
PREFERRED P/N
SMBJ3V3-E3/52
SMBJ3V-E3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
150
10
tr = 10
µsec.
tr =
8
µsec.
Peak
Value
I
PPM
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
100
I
R
(T
j
)/I
R
(T
j
= 25 °C)
Half
Value
- I
PP
2
I
PPM
50
td = 1000
µs
td = 20
µs
1
td
0
0
1.0
2.0
3.0
4.0
0.1
0
25
50
75
100
125
150
175
t - Time (ms)
T
j
- Junction T emperature (°C)
Figure 1. Pulse Waveform
Figure 3. Relative Variation of Leakage Current vs.
Junction Temperature
10
10
P
PPM
- Peak Pulse Power (kW)
Clamping
Voltage
(V)
8
1
6
10/1000
µs
8/20 µs
0.1
0.01
4
0.1
1
10
0.1
1
10
100
1000
td - Pulse
Width
(ms)
Ipp (A)
Figure 2. Peak Pulse Power Rating Curve
Figure 4. Clamping Voltage vs. Peak Pulse Current
(Tj initial = 25 °C)
www.vishay.com
2
Document Number 88940
08-Sep-06
SMBJ3V3
Vishay General Semiconductor
5500
100
C
J
- Junction Capacitance (pF)
I
F
- Peak Forward Current (A)
5000
4500
4000
3500
3000
2500
2000
0
0.5
1
1.5
2
2.5
3
3.5
T
j
= 175 °C
10
T
j
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Reverse
Voltage
(V)
V
F
- Forward
Voltage
Drop (V)
Figure 5. Typical Junction Capacitance
Figure 7. Typical Peak Forward Voltage Drop vs. Peak
Forward Current
100
Transient Thermal Impedance (°C/W)
10
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 MIN.
(1.52 MIN.)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number 88940
08-Sep-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
