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CN8550

产品描述SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小108KB,共4页
制造商CDIL
官网地址http://www.cdilsemi.com
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CN8550概述

SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CN8050 NPN
CN8550 PNP
TO-92
Plastic Package
E
BC
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation@ T
a
=25ºC
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
*P
tot
T
j
T
stg
VALUE
25
40
6.0
800
1.0
100
625
150
- 55 to +150
UNITS
V
V
V
mA
A
mA
mW
ºC
ºC
*R
th (j-a)
200
K/W
* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
ELECTRICAL CHARACTERISTICS (T
a
=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=2mA, I
B
=0
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
DC Current Gain
V
CBO
V
EBO
h
FE
I
C
=10µA, I
E
=0
I
E
=100µA, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
CN8050C/CN8550C
CN8050D/CN8550D
V
CE
=1V, I
C
=350mA
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Gain Bandwidth Product
Collector Base Capacitance
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
cbo
V
CB
=35V, I
E
= 0
V
BE
=3V, I
C
= 0
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=10mA, V
CE
=5V,
f=50MHz
V
CB
=10V, f=1MHz
PNP
NPN
Data Sheet
MIN
25
40
6
45
120
120
160
60
TYP
MAX
UNITS
V
V
V
300
200
300
100
100
0.5
1.2
100
nA
nA
V
V
MHz
35
20
Page 1 of 3
pF
pF
Continental Device India Limited

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