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BR801

产品描述BRIDGE RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小18KB,共2页
制造商EIC [EIC discrete Semiconductors]
标准
下载文档 详细参数 选型对比 全文预览

BR801概述

BRIDGE RECTIFIER DIODE

BR801规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称EIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
配置BRIDGE, 4 ELEMENTS
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
最大非重复峰值正向电流300 A
元件数量4
最大输出电流8 A
最大重复峰值反向电压100 V
表面贴装NO
Base Number Matches1

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BR800 - BR810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 4.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
BR800 BR801 BR802 BR804 BR806 BR808 BR810
50
35
50
100
70
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
2
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amps.
AS
Volts
µA
µ
A
2
°
C/W
°
C
°
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 23, 1998

BR801相似产品对比

BR801 BR800 BR802 BR804 BR806 BR808 BR810
描述 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compli compli compli compli compli
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
最大非重复峰值正向电流 300 A 300 A 300 A 300 A 300 A 300 A 250 A
元件数量 4 4 4 4 4 4 4
最大输出电流 8 A 8 A 8 A 8 A 8 A 8 A 8 A
最大重复峰值反向电压 100 V 50 V 200 V 400 V 600 V 800 V 1000 V
表面贴装 NO NO NO NO NO NO NO

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