GBC807
Description
Package Dimensions
1/2
P NP E PITAX I AL P L ANAR T RANS ISTO R
The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-50
-45
-5
-800
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVEBO
BVCEO
BVCES
ICES
IEBO
*VCE(sat)
VBE(on)
hFE
fT
Cob
at Ta = 25 :
Min.
-5
-45
-50
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-100
-100
-700
-1.2
630
-
12
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IE=-100uA
IC=-10mA
IC=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A
Test Conditions
2/2
Classification Of hFE
Rank
hFE
A
100-250
B
160-400
C
250-630
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165
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