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MUR150

产品描述1 A, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小257KB,共3页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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MUR150概述

1 A, SILICON, SIGNAL DIODE, DO-41

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MUR120-MUR190
Super Fast Rectifiers
VOLTAGE RANGE: 200 --- 900 V
CURRENT: 1.0 A
Features
Low cos t
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
DO - 41
Mechanical Data
Cas e:JEDEC DO--41,m olded plas tic
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR MUR
120 130
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous f orw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Storage temperature range
N OTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH z and applied rev erse v oltage of 4.0V D C .
3. Therm al res istanc e f rom junction to am bient.
MUR MUR MUR
140
150
160
400
280
400
500
350
500
1.0
600
420
600
MUR
170
700
490
700
MUR
180
800
560
800
MUR
UNITS
190
900
630
900
V
RRM
V
R MS
V
DC
I
F(AV)
200
140
200
300
210
300
V
V
V
A
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.875
2.0
50
35.0
A
1.25
5.0
150
1.7
10.0
100
75
15
60
V
A
ns
pF
/W
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
25
22
50
50
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
http://www.luguang.cn
Email:lge@luguang.cn

 
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