BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2014-08-18
Ø
12.75
Ø
11
±0.5
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Rändel 0.8
knurl 0.8
25 A
50 ... 600 V
28.5
min
1.3
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
10 g
Dimensions - Maße [mm]
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
BYP25A05
BYP25A1
BYP25A2
BYP25A3
BYP25A4
BYP25A6
Cathode
BYP25K05
BYP25K1
BYP25K2
BYP25K3
BYP25K4
BYP25K6
Repetive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
300
400
600
T
C
= 150°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
S
4.2
+0.3
9.3
±0.2
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
60
120
240
360
480
700
25 A
90 A
1
)
270/300 A
375 A
2
s
-50...+215°C
-50...+215°C
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature T
C
= 150°C – Max. Gehäusetemperatur T
C
= 150°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
Characteristics
Forward Voltage
Durchlass-Spannung
Leakage Current
Sperrstrom
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Maximum pressing force
Maximaler Einpressdruck
T
j
= 25°C
T
j
= 25°C
I
F
= 25 A
V
R
= V
RRM
V
F
I
R
R
thC
F
pmax
Kennwerte
< 1.1 V
< 100 µA
< 1 K/W
4 kN
120
[%]
100
10
3
[A]
10
2
T
j
= 125°C
80
10
T
j
= 25°C
60
40
1
20
I
FAV
0
0
T
C
50
100
150
200
[°C]
I
F
10
-1
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
270a-(25a-1,1v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
3
[A]
10
2
î
F
10
1
10
10
2
[n]
10
3
Peak forward surge current versus number of cycles at 50 Hz
Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
© Diotec Semiconductor AG
http://www.diotec.com/
2
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