MAKO Semiconductor
CO., LTD
SOT-23 Plastic-Encapsulate D
BZX84C2V4-BZX84C43
ZENER DIODE
SOT-23
FEATURES
Planar Die Construction
300mW Power Dissipation
Zener Voltages from 2.4V -
43V
Ultra-Small Surface Mount Package Power
Dissipation
Maximum Ratings(T
a
=25℃ unless otherwise specified)
Characteristic
Forward Voltage (Note 2)
Power Dissipation(Note 1)
Junction Temperature
Storage Temperature Range
Symbol
V
F
P
d
T
j
Value
0.9
300
417
150
-55~+150
Unit
V
mW
℃
/W
℃
℃
@ I
F
= 10mA
Thermal Resistance
from
Junction to Ambient
MAKOSemiconductor
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ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Maximum Zener
Type
Number
Code
V
Z
@I
ZT
Nom(V)
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
Z
ZT
@I
ZT
(Ω)
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
ZenerVoltage Range (Note 2)
Impedance
(Note 3)
Z
ZK
@I
ZK
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Reverse
Current
Temperature
Coefficent of
Zener
voltage
@ I
ZT
=5mA
I
R
(μA)
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10
mV/°C
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300μs.
3. f = 1kH
Z
.
MAKOSemiconductor
M
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10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
5
m
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
nd
ico
30
40
200
200
45
225
55
55
70
80
80
80
90
130
100
225
250
250
300
300
325
350
350
700
uc
0.5
0.5
0.5
0.5
0.5
1
r
to
0.1
0.1
0.1
0.1
23.1
25.2
27.3
32
2
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ELECTRICAL CHARACTERISTICS
Zener Characteristics
(
V
Z
Up to 10 V
)
100
100
Zener Characteristics
(
11 V to 43 V
)
T
a
=25
℃
Pulsed
I
Z
, ZENER CURRENT (mA)
P
D
=300mW
T
a
=25
℃
Pulsed
I
Z
, ZENER CURRENT (mA)
P
D
=300mW
10
10
5.1
5.6
2.4
4.7
6.2
6.8
8.2
7.5
9.1
10
20
22
27
24
18
30
11
12
13
15
16
33
36
39
1
1
0.5
1
2
3
4
5
6
7
8
9
10
11
0.5
10
15
20
25
30
35
40
45
43
50
V
Z
, ZENER VOLTAGE (V)
V
Z
, ZENER VOLTAGE (V)
40
Temperature Coefficients
TYPICAL T
a
VALUES
100
Typical Leakage Current
Pulsed
M
8
12
25
50
θ
VZ
, TEMPERATURE COEFFICIENT (mV/
℃
)
35
30
25
20
15
10
5
0
-5
0
FOR BZX84CXXX SERIES
I
R
, LEAKAGE CURRENT (uA)
10
AK
4
16
20
24
1
V
Z
@ I
ZT
0.1
V
Z
, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
O
Se
m
40
44
28
32
36
0.01
1E-3
T
a
=100
℃
T
a
=25
℃
1E-4
0
5
10
15
20
25
30
35
40
45
V
Z
, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
T
a
=25
℃
I
Z(AC)
=0.1I
Z(DC)
f=1kHz
nd
ico
1000
T
a
=25
℃
f=1MHz
0V BIAS
C, CAPACITANCE (pF)
100
I
Z
=1mA
Z
ZT
, DYNAMIC IMPEDANCE(Ω)
100
I
Z
=5mA
1V BIAS
uc
10
BIAS AT
50% OF V
Z
NOM
10
r
to
1
1
10
100
1
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
350
300
(mW)
POWER DISSIPATION
P
D
250
200
150
100
50
0
0
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
MAKO Semiconductor
3
D,Aug,2014
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Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
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MAKOSemiconductor
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