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Datasheet> 器件分类 > 分立半导体> 晶体管> MJE13003G-G-T6S-K

MJE13003G-G-T6S-K: 产品描述Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126S, 3 PIN; 产品类别分立半导体晶体管; 文件大小411KB，共9页; 制造商UNISONIC TECHNOLOGIES CO.,LTD; 官网地址http://www.unisonic.com.tw/; 标准

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MJE13003G-G-T6S-K概述

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126S, 3 PIN

MJE13003G-G-T6S-K规格参数

参数名称	属性值
是否Rohs认证	符合
Objectid	1343962010
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	1.5 A
集电极-发射极最大电压	400 V
配置	SINGLE
最小直流电流增益 (hFE)	46
JEDEC-95代码	TO-126
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	10 MHz

MJE13003G-G-T6S-K相似产品对比

	MJE13003G-G-T6S-K	MJE13003G-E-T6C-K	MJE13003G-G-T60-K	MJE13003G-G-T6C-K	MJE13003G-G-TA3-T	MJE13003L-G-T60-K	MJE13003L-G-T6S-K	MJE13003L-G-TA3-T
描述	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126S, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126S, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
Objectid	1343962010	1261578602	1164813148	1261578604	1164813157	1164813252	1343962018	1164813261
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
集电极-发射极最大电压	400 V	400 V	400 V	400 V	400 V	400 V	400 V	400 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	46	36	46	46	46	46	46	46
JEDEC-95代码	TO-126	TO-126	TO-126	TO-126	TO-220AB	TO-126	TO-126	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz

MJE13003G-G-T6S-K

MJE13003G-G-T6S-K概述

MJE13003G-G-T6S-K规格参数

MJE13003G-G-T6S-K相似产品对比

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