SMD Type
PNP Transistors
BC856BS
(KC856BS)
Transistors
■
Features
●
Low collector capacitance
●
Low collector-emitter saturation voltage
●
Closely matched current gain
●
Reduces number of components and board space
6
5
4
TR2
TR1
1
2
3
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
single pulse: tp
≤
1 ms
single pulse: tp
≤
1 ms
(Per transistor) *1
(Per device) *1
Thermal Resistance From Junction To Ambient (Per transistor) *1
Thermal Resistance From Junction To Ambient (Per device) *1
Thermal Resistance From Junction To Solder Point
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
R
θJA
R
θJSP
T
J
T
stg
Rating
-80
-65
-6
-100
-200
-200
200
300
625
416
230
150
-65 to 150
℃
℃/W
mW
mA
V
Unit
Collector Power Dissipation
*1: Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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1
SMD Type
PNP Transistors
BC856BS
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector capacitance
Emitter capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
C
c
C
e
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
CB
= -30 V , I
E
=0,T
J
=150℃
V
EB
= -6V , I
C
=0
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10uA
V
CE
=- 5V, I
C
= -2mA
V
CB
= -10V, I
E
=ie=0,f=1MHz
V
EB
= -0.5V, I
C
=ic=0,f=1MHz
V
CE
= -5 V; I
C
= -0.2 mA;
R
S
= 2 kΩ; f = 10 Hz to 15.7 KHz
V
CE
= -5 V; I
C
= -0.2 mA;
R
S
= 2 kΩ; f = 1 KHz ,B=200Hz
V
CE
= -5V, I
C
= -10mA,f=100MHz
Transistors
(KC856BS)
Min
-80
-65
-6
Typ
Max
Unit
V
-15
-5
-100
-55
-200
-755
-900
-600
-650
270
200
290
2.3
10
1.6
450
-750
-820
-100
-300
-850
nA
uA
nA
mV
pF
Noise figure
NF
dB
2.9
100
MHz
Transition frequency
f
T
■
Marking
Marking
*E6
2
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SMD Type
PNP Transistors
BC856BS
■
Typical Characterisitics
500
P
tot
400
Transistors
(KC856BS)
300
200
100
0
−
75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve SOT363
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.50
0.20
0.10
0.05
10
0.01
0
0.02
0.75
0.33
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
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3
SMD Type
PNP Transistors
BC856BS
■
Typical Characterisitics
600
h
FE
(1)
Transistors
(KC856BS)
−0.20
I
C
(A)
−0.16
400
−0.12
(2)
I
B
(mA) =
−2.5
−2.25
−2.0
−1.75
−1.5
−1.25
−1.0
−0.75
−0.08
200
(3)
−0.5
−0.25
−0.04
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I
C
(mA)
0
0
−2
−4
−6
−8
−10
V
CE
(V)
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 3.
Per transistor: DC current gain as a function of
collector current; typical values
−1
Fig 4.
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
V
BE
(V)
−0.8
−1.3
V
BEsat
(V)
−1.1
.
−0.9
(1)
(2)
(3)
−0.7
−0.6
−0.5
−0.3
−0.4
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−0.1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−5
V; T
amb
= 25
°
C
I
C
/I
B
= 20
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 5.
Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
4
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SMD Type
PNP Transistors
BC856BS
■
Typical Characterisitics
−10
V
CEsat
(V)
−1
10
3
Transistors
(KC856BS)
f
T
(MHz)
10
2
−10
−1
(1)
(2)
(3)
−10
−2
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
10
−1
−10
I
C
(mA)
−10
2
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
=
−5
V; T
amb
= 25
°C
Fig 7.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
10
Fig 8.
Per transistor: Transition frequency as a
function of collector current; typical values
15
C
e
(pF)
13
C
c
(pF)
8
6
11
4
9
2
7
0
0
−2
−4
−6
−8
−10
V
CB
(V)
5
0
−2
−4
V
EB
(V)
−6
f = 1 MHz; T
amb
= 25
°
C
f = 1 MHz; T
amb
= 25
°C
Fig 9.
Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
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