SMD Type
SMD Type
PNP Transistors
MMBT5401
(KMBT5401)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.2
2.8
-0.1
3
Pb-Free Packages are Available
+0.2
1.6
-0.1
High Voltage Transistors
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base v oltage
Collector-emitter v oltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
stg
Rating
-160
-150
-5
-0.6
300
-55 to +150
Unit
V
V
V
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
T r a n s i s t o n fr e q u e n c y
* Pulse Test: Pulse Width = 300
s, Duty Cycle=2.0%.
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
I
C
= -100
I
E
= -10
Testconditi ons
A, I
E
= 0
A, I
C
= 0
I
C
=- 1.0 mA, I
B
= 0
V
CB
=- 120 V, I
E
= 0
V
EB
= -4.0 V, I
C
= 0
I
C
= -1.0 mA, V
CE
= -5 V
I
C
= -10 mA, V
CE
= -5 V
I
C
= -50 mA, V
CE
= -5 V
V
CE(sat)
I
C
= -50 mA, I
B
= -5.0 mA
V
BE(sat)
I
C
= -50 mA, I
B
= -5.0 mA
f
T
V
CE
=-5V,I
C
=-10mA,f=30MHz
100
80
100
50
-0.5
-1.0
V
V
MHz
300
Min
-160
-150
-5
-0.1
-0.1
Typ
Max
Unit
V
V
V
A
A
■
Classification of h
fe(2)
Type
Range
Marking
MMBT5401
100-300
MMBT5401-L
100-200
2L
MMBT5401-H
200-300
www.kexin.com.cn
1
SMD Type
SMD Type
MMBT5401
Typical Characteristics
-20
-18
Transistors
(KMBT5401)
Static Characteristic
-100uA
-90uA
-80uA
-70uA
COMMON
EMITTER
T
a
=25
℃
h
FE
300
h
FE
—— I
C
V
CE
=-5V
T
a
=100 C
o
(mA)
-16
-14
-12
-10
-8
-6
-4
-2
-0
250
I
C
200
COLLECTOR CURRENT
-60uA
-50uA
-40uA
-30uA
-20uA
I
B
=-10uA
-0
-3
-6
-9
DC CURRENT GAIN
150
T
a
=25 C
o
100
50
0
-1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
I
C
-100
-600
(mA)
-1.0
V
BEsat
—— I
C
β=10
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-1
V
CEsat
——
β=10
I
C
-0.8
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.6
T
a
=100
℃
-0.1
-0.4
T
a
=100
℃
T
a
=25
℃
-0.2
-0.0
-0.1
-1
-10
-100
-600
-0.01
-0.1
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
—— V
BE
V
CE
=-5V
100
C
ob
/ C
ib
—— V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
I
C
(mA)
(pF)
Cib
COLLECTOR CURRENT
-10
CAPACITANCE
T
a
=100 C
o
C
10
-1
T
a
=25
℃
Cob
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.5
-1
-10
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
—— I
C
0.4
P
c
——
T
a
(MHz)
250
COLLECTOR POWER DISSIPATION
P
c
(W)
VCE=-5V
o
T
a
=25 C
-0
-5
-10
-15
-20
-25
-30
0.3
f
T
TRANSITION FREQUENCY
200
150
0.2
100
0.1
50
0
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
2
www.kexin.com.cn
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
