SMD Type
NPN Transistors
MJD13002
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
●
Power Switching Applications
+0.1
1.3
-0.1
■
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
600
400
6
800
300
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Fall time
Storage time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
f
t
s
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 600 V , I
E
= 0
V
CE
= 400 V , I
E
= 0
V
EB
= 6V , I
C
=0
I
C
=200 mA, I
B
=40mA
I
C
=200 mA, I
B
=40mA
V
CE
= 10V, I
C
= 200mA
V
CE
= 10V, I
C
= 0.25 mA
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
V
CE
= 10V, I
C
= 100mA,f=1MHz
5
9
5
0.5
2.5
uS
MHz
Min
600
400
6
100
100
100
0.5
1.1
40
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
MJD13002-A
9-15
3002A
MJD13002-B
15-20
3002B
MJD13002-C
20-25
3002C
MJD13002-D
25-30
3002D
MJD13002-E
30-35
3002E
MJD13002-F
35-40
3002F
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1
SMD Type
NPN Transistors
MJD13002
■
Typical Characterisitics
Static Characteristic
300
100
Transistors
h
FE
COMMON EMITTER
V
CE
= 10V
—— I
C
COLLECTOR CURRENT I
C
(mA)
250
COMMON
EMITTER
T
a
=25
℃
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
I
B
=1mA
1
200
DC CURRENT GAIN h
FE
T
a
=100
℃
T
a
=25
℃
10
150
100
50
0
0
2
4
6
8
10
12
14
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
100
(mA)
800
1000
V
BEsat
β=5
—— I
C
1000
V
CEsat
β=5
——
I
C
800
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
100
600
T
a
=100
℃
400
T
a
=25
℃
200
0
0.1
1
10
100
800
10
0.5
1
10
100
800
COLLECTOR CURREMT
I
C
BE
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
800
——
V
10
f
T
COMMON EMITTER
V
CE
=10V
—— I
C
TRANSITION FREQUENCY f
T
(MHz)
COMMON EMITTER
V
CE
=10V
COLLECTOR CURRENT I
C
(mA)
100
8
T
a
=25
℃
T =1
00
℃
a
10
T =2
5
℃
a
6
4
1
2
0.1
0
200
400
600
800
1000
1200
0
20
40
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
60
80
I
C
(mA)
100
120
1000
C
ob
/C
ib
—— V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
40 0
P
C
——
a
T
C
ib
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
CAPACITANCE C (pF)
100
200
C
ob
10
100
1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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