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1N4005A: 产品描述1 A, 100 V, SILICON, SIGNAL DIODE, DO-41; 产品类别半导体分立半导体; 文件大小778KB，共2页; 制造商KEXIN; 官网地址http://www.kexin.com.cn/html/index.htm

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1N4005A概述

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

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SMD Type

Rectifier Diodes

1N4001A ~ 1N4007A

DO-214AC(SMA)

Diodes

Unit: mm

4.32

4.12

■

Features

●

Low forward voltage drop

●

High current capability

●

Easy pick and place

●

High surge current capability

●

Plastic material used carries Underwriters

Laboratory Classification 94V-0

4.597

3.988

2.126

1.397

2.896 2.22

2.489 2.02

5.668

4.925

2.75

2.55

5.87

5.67

Recommended

Land Pattern

2.438

1.981

1.524

0.762

0.203

0.051

0.305

0.152

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Repetitive Peak Reverse Voltage

RMS Voltage

Maximum DC Blocking Voltage

Forward Voltage @ 1A

Averaged Forward Current.T

=100℃

Peak Forward Surge Current @ 8.3ms

Maximum DC Reverse Current Ta=25℃

Ta=125℃

Maximum Reverse Current

Typical Junction Capacitance

Symbol

RRM

RMS

FAV

FSM

trr

θJA

θJL

Tstg

150

-55 to 150

1.5

4001A

4002A

100

4003A

200

140

200

4004A

400

280

400

1.1

μA

℃/W

4005A

600

420

600

4006A

800

560

800

4007A

1000

700

1000

Unit

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Lead *3

Junction Temperature

Storage Temperature

℃

* 1 Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

* 2 Measured at 1 MHz and Applied V

=4.0 V

■

Marking

NO.

Marking

1N4001A 1N4002A 1N4003A 1N4004A 1N4005A 1N4006A 1N4007A

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1N4005A相似产品对比

	1N4005A	1N4002A	1N4003A	1N4007A	1N4001A	1N4004A	1N4006A
描述	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 50 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

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