PZT772
Elektronische Bauelemente
RoHS Compliant Product
PNP Transistor
Epitaxial Planar Transistor
SOT-223
Description
The PZT772 is designed for using
in output stage of 2W amplifier,
voltage regulator, DC-DC converter
and driver.
REF.
A
C
D
E
I
H
Min.
6.70
2.90
0.02
0C
0.60
0.25
Max.
7.30
3.10
0.10
10 C
0.80
0.35
REF.
B
J
1
2
3
4
5
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
7 7 2
MAXIMUM RATINGS* (T
amb
=25 C , unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction and Storage Temperature
Parameter
Value
-40
-30
-5
-3
1.5
-55~-150
o
Units
V
V
V
A
W
O
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS
Tamb=25
unlessotherwise
specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
h
FE
1
2
MIN
-40
-30
-5
_
_
TYP
_
_
_
_
_
_
MAX
_
_
_
UNIT
V
V
V
uA
uA
_
_
Test
conditions
Ic=-100u A
I
C
= -10 mA
I
E
= -10u A
V
CB
= -30 V
V
EB
=-3V
V
CE
= -2V, I
C
= -20mA
V
CE
=-2V, I
C
= -1mA
I
C
=-2A,
I
B
= -0.2A
-1
1
_
30
100
_
_
_
_
160
-0.3
-1
80
55
500
-0.5
-2
_
_
V
CE
(sat)
V
BE
(sat)
V
V
MHz
pF
f
T
Cob
P
160-320
E
250-500
I
C
=-2A, I
B
= -0.2A
V
CE
=-20V,I
C
=-20mA ,
f =
100MHz
Collector output capacitance
V
CB
=-10V, f=1MHz
CLASSIFICATION OF h
FE2
Rank
Range
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
Q
100-200
Any changing of specification will not be informed individual
Page 1 of 2
PZT772
Elektronische Bauelemente
PNP Transistor
Epitaxial Planar Transistor
RATING AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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