Preliminary
Datasheet
BCR8AS-14LJ
Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 700 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
Non-Insulated Type
Planar Type
Surface Mounted type
R07DS0514EJ0100
Rev.1.00
Oct 14, 2011
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
12
3
3
1
Applications
Washing machine, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Voltage class
14
700
840
Unit
V
V
Ratings
8
80
26
5
0.5
10
2
–40 to +125
–40 to +125
0.32
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360°conduction, Tc =97C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 1 of 6
BCR8AS-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
2.7
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 12 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T
2
tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 2 of 6
BCR8AS-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
Tj = 25°C
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
10
1
60
40
20
10
0
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Gate Voltage (V)
V
GT
= 1.5V
10
0
I
RGT III
10
2
I
RGT I
, I
FGT I
10
−1
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.2V
10
1
10
2
10
3
10
4
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
3
4
Typical Example
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
−1
10
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 3 of 6
BCR8AS-14LJ
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Case Temperature (°C)
14
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
Typical Example
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
4
10
2
10
3
10
2
–40
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
10
3
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
−40
0
40
80
120
160
Typical Example
Latching Current (mA)
Distribution
10
2
T
2
+, G–
Typical Example
10
1
T
2
+, G+
Typical Example
T
2
–, G–
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 4 of 6
BCR8AS-14LJ
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Preliminary
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Commutation Characteristics (Tj = 125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
10
1
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
I Quadrant
10
0
10
0
III Quadrant
10
1
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
I
FGT I
I
RGT I
I
RGT III
10
2
Typical Example
10
1 0
10
10
1
10
2
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C
1
6V
V
A
330Ω
6V
V
A
330Ω
R
1
C
0
R
0
C
0
= 0.1μF
R
0
= 100Ω
Test Procedure I
6Ω
Test Procedure II
C
1
= 0.1 to 0.47μF
R
1
= 47 to 100Ω
6V
V
A
330Ω
Test Procedure III
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 5 of 6
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