Preliminary
Datasheet
BCR12LM-16LH
Triac
Medium Power Use
Features
•
•
•
•
•
I
T (RMS)
: 12 A
V
DRM
: 800 V
I
FGTI
, I
RGTI
, I
RGT III
: 50 mA or 35mA (I
GT
item:1)
High Commutation
V
iso
: 1800V
•
The Product guaranteed maximum junction
temperature 150°C
•
Insulated Type
•
Planar Type
R07DS0415EJ0100
Rev.1.00
May 19, 2011
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose AC power
control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Symbol
V
DRM
V
DSM
Voltage class
16
800
960
Unit
V
V
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 1 of 7
BCR12LM-16LH
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Ratings
12
120
60
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 93°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
Electrical Characteristics
Parameter
Symbol
BCR12LM-16LH-1
(I
GT
item : 1)
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
BCR12LM-16LH
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
I
DRM
V
TM
mA
V
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
—
—
—
—
—
—
0.2
0.1
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
35
35
35
—
—
4.0
—
—
—
—
—
—
—
0.2
0.1
—
13
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
50
50
—
—
4.0
—
V
V
V
mA
mA
mA
V
Tj = 150°C
V
DRM
applied
Tc = 25°C, I
TM
= 20 A
instantaneous
measurement
Tj = 25°C, V
D
= 6 V
R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V
R
L
= 6
Ω,
R
G
= 330
Ω
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of decay of on-state
Note4
commutating current
R
th (j-c)
(di/dt)c
—
7
Tj = 125°C
V
D
= 1/2 V
DRM
Tj = 150°C
V
V
D
= 1/2 V
DRM
Note3
°C/W
Junction to case
A/ms Tj = 125°C
(dv/dt)c < 100 V/μs
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
V
D
= 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 100 V/μs
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 2 of 7
BCR12LM-16LH
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
Tj = 25°C
200
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
160
10
1
120
10
0
80
40
10
−1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
10
2
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
V
GM
= 10V
10
1
V
GT
= 1.5V
10
0
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
10
2
I
FGT I
I
RGT III
I
RGT I
V
D
= 6V
R
L
= 6Ω
I
GT
= 50mA
I
GT
item1 = 35mA
V
GD
= 0.1V
10
2
10
3
10
4
10
−1
1
10
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
–1
10
0
10
1
10
2
10
3
10
4
10
2
V
D
= 6V
R
L
= 6Ω
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 3 of 7
BCR12LM-16LH
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
No Fins
10
2
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
360° Conduction
Resistive,
inductive loads
10
1
10
0
10
−1
10
1
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0
2
4
6
8
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
Ambient Temperature (°C)
16
140
Curves apply regardless
of conduction angle
140
120
100
Case Temperature (°C)
10
12
14
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
10
4
10
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10
2
–40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 4 of 7
BCR12LM-16LH
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
3
Distribution
Preliminary
Latching Current vs.
Junction Temperature
Latching Current (mA)
T
2
+, G–
Typical Example
10
2
10
2
10
1
T
2
–, G–
Typical Example T
2
+, G+
Typical Example
10
0
–40
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Typical Example
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
I Quadrant
60
40
20
0
10
1
10
2
10
3
10
4
Typical Example
Tj = 125°C
III Quadrant
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Commutation Characteristics (Tj=125°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
140
120
100
80
I Quadrant
60
40
20
0
10
1
10
2
Typical Example
Tj = 150°C
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
III Quadrant
10
1
Minimum
Value
(I
GT
item1)
10
3
10
4
10
0
10
0
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
10
1
I Quadrant
Minimum
Value
10
2
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 5 of 7
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