600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Features
GaN on SiC Depletion-Mode Transistor
Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
+50 V Typical Operation
MTTF = 600 years (T
J
< 200°C)
Rev. V5
MAGX-001090-600L00
Applications
Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
Military radar for IFF and Data Links.
Description
The MAGX-001090-600L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme
mismatch
load conditions compared with older semiconductor
technologies.
MAGX-001090-600L0S
Ordering Information
Part Number
MAGX-001090-600L00
MAGX-001090-600L0S
MAGX-A11090-600L00
Description
Flanged
Flangeless
1.03 - 1.09 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V5
Typical RF Performance under standard operating conditions, P
OUT
= 600 W (Peak)
Freq
(MHz)
1030
1090
P
IN
(W)
4.95
4.50
Gain
(dB)
20.8
21.3
I
D
(A)
20.4
18.6
Eff.
(%)
58.6
64.4
RL
(dB)
-16.8
-11.0
Droop
(dB)
0.24
0.23
+1dB OD
(W)
649
661
VSWR-S
(3:1)
S
S
VSWR-T
(5:1)
P
P
Electrical Specifications: Freq. = 1030 - 1090 MHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests:
Standard Pulse Conditions: V
DD
= 50 V, I
DQ
= 600 mA; Pulse = 32 µs / 2%
Input Power
Power Gain
Drain Efficiency
Pulse Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 600 W Peak (12 W avg.)
P
OUT
= 600 W Peak (12 W avg.)
P
OUT
= 600 W Peak (12 W avg.)
P
OUT
= 600 W Peak (12 W avg.)
P
OUT
= 600 W Peak (12 W avg.)
P
OUT
= 600 W Peak (12 W avg.)
P
IN
G
P
η
D
Droop
VSWR-S
VSWR-T
-
19.5
55
-
-
-
4.3
21.4
63
0.2
3:1
5:1
6.7
-
-
0.3
-
-
Wpk
dB
%
dB
-
-
Mode-S ELM Pulse Width Conditions
1
: V
DD
= 50 V, I
DQ
= 400 mA;
48 pulses of 32 µs on and 18 µs off, repeat every 24 ms; Overall Duty Factor = 6.4%
Input Power
Power Gain
Drain Efficiency
P
OUT
= 550 W Peak (35.2 W avg.)
P
OUT
= 550 W Peak (35.2 W avg.)
P
OUT
= 550 W Peak (35.2 W avg.)
P
IN
G
P
η
D
-
-
-
4.6
20.7
61
-
-
-
Wpk
dB
%
1. For Mode-S ELM pulse conditions, RF power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms)
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics:
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input matched
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
55
5.5
N/A
-
-
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 75 mA
V
DS
= 5 V, I
D
= 17.5 mA
I
DS
V
GS (TH)
G
M
-
-5
12.5
1.0
-3.1
19.2
30
-2
-
mA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Absolute Maximum Ratings
2,3,4,5
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
DMAX
)
Input Power (P
IN
)
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation at 85 ºC
Thermal Resistance, (T
J
= 70 ºC)
V
DD
= 50 V, I
DQ
= 600 mA, Pout = 600 W, 32 µs Pulse / 2% Duty
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
2.
3.
4.
5.
Rev. V5
Limit
+65 V
-8 to -2 V
80 A
P
IN
(nominal) + 3 dB
200ºC
3.5 kW
0.05 ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
1300 V
4000 V
Operation of this device above any one of these parameters may cause permanent damage.
Input Power Limit is +3 dB over nominal drive required to achieve P
OUT
= 600 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Test Fixture Impedances
F (MHz)
1030
1060
1090
Z
IF
(Ω)
1.1 - j1.5
1.1 - j1.4
1.1 - j1.3
Z
OF
(Ω)
1.5 + j0.5
1.5 + j0.6
1.5 + j0.6
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
Zif
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Test Fixture Circuit Dimensions
Rev. V5
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
Rev. V5
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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