UM0004
N-Ch 100V Fast Switching MOSFETs
General Description
The UM0004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM0004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Product Summery
BV
DSS
100V
Applications
R
DS(ON)
112mΩ
ID
2.5A
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
3
1
Rating
100
±20
2.5
2
10
7.3
11
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
25
Unit
℃/W
℃/W
1
UM0004
QM0004S
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=2A
V
GS
=4.5V , I
D
=1A
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25℃
V
DS
=80V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=2A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=80V , V
GS
=10V , I
D
=2A
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=50V , V
GS
=10V , R
G
=3.3Ω
I
D
=2A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.098
90
95
1.5
-4.57
---
---
---
20
2
26.2
3.8
4.8
4.2
7.6
41
14
1535
60
37
Max.
---
---
112
120
2.5
---
1
5
±100
---
4
36.7
5.32
6.7
8.4
14
82
28
2149
84
52
pF
ns
nC
Unit
V
V/℃
mΩ
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=5A
Min.
1.5
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
2
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
F
=2A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
35
17
Max.
2.5
10
1.2
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=11A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM0004
Typical Characteristics
15
N-Ch 100V Fast Switching MOSFETs
96
V
GS
=10V
12
I
D
=2A
94
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
I
D
Drain Current (A)
9
6
V
GS
=3V
3
0
0
0.5
R
DSON
(mΩ)
92
90
88
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
4
6
V
GS
(V)
8
10
Fig.1 Typical Output Characteristics
10
Fig.2 On-Resistance vs. Gate-Source
8
I
S
Source Current(A)
6
4
T
J
=150℃
T
J
=25℃
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
2.5
Normalized V
GS(th)
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
2.0
1.5
1.0
0.5
T
J
,Junction Temperature (℃ )
-50
T
J
, Junction Temperature (℃)
0
50
100
150
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
UM0004
N-Ch 100V Fast Switching MOSFETs
10000
F=1.0MHz
Ciss
Capacitance (pF)
1000
10.00
100us
1ms
1.00
100
I
D
(A)
10ms
100ms
Coss
Crss
10
1
5
9
13
17
21
25
0.10
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
o
DC
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
10
100
1000
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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