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1N5407G

产品描述3 A, 800 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小131KB,共2页
制造商CTC [Compact Technology Corp.]
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1N5407G概述

3 A, 800 V, SILICON, RECTIFIER DIODE

3 A, 800 V, 硅, 整流二极管

1N5407G规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层MATTE TIN
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
应用GENERAL PURPOSE
相数1
最大重复峰值反向电压800 V
最大平均正向电流3 A
最大非重复峰值正向电流200 A

文档预览

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1N5400G thru 1N5408G
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 3.0
Amperes
GLASS PASSIVATED RECTIFIERS
FEATURES
Low cost
Glass passivation junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
A
DO-201AD
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.2 grams
Mounting position : Any
Dim.
A
B
C
DO-201AD
Min.
Max.
25.4
7.20
1.20
-
9.50
1.30
4.80
5.30
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNIT
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
50
200
300 400
500
600
800 1000
100
V
35
140
210 280
350
420
560
700
V
70
50
200
300 400
500
600
800 1000
100
V
3.0
150
1.1
5
50
50
20
-55 to +150
-55 to +150
35
A
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
@T
A
=
75 C
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
0JA
A
V
uA
pF
C/W
@T
J
=25 C
@T
J
=100 C
T
J
T
STG
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
1
of 2
1N5400G thru 1N5408G

1N5407G相似产品对比

1N5407G 1N5402G 1N5404G 1N5405G 1N5400G 1N5403G 1N5406G 1N5408G
描述 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

 
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