电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

VS-20CTQ045-N3

产品描述45 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别分立半导体    二极管   
文件大小157KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

VS-20CTQ045-N3在线购买

供应商 器件名称 价格 最低购买 库存  
VS-20CTQ045-N3 - - 点击查看 点击购买

VS-20CTQ045-N3概述

45 V, SILICON, RECTIFIER DIODE, TO-220AB

45 V, 硅, 整流二极管, TO-220AB

VS-20CTQ045-N3规格参数

参数名称属性值
厂商名称Vishay(威世)
包装说明R-PSFM-T3
Reach Compliance Codeunknow
ECCN代码EAR99
Samacsys DescriptiVishay VS-20CTQ045-N3, Dual Schottky Diode, Common Cathode, 45V 20A, 3-Pin TO-220AB
其他特性FREE WHEELING DIODE
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.76 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流265 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压45 V
最大反向电流2000 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 10 A
Base 2
common
cathode
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 10 A
35 V, 40 V, 45 V
0.57 V
15 mA at 125 °C
175 °C
Common cathode
13 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C (per leg)
Range
VALUES
20
35 to 45
1060
0.57
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
35
V
RWM
35
40
40
45
45
V
VS-
VS-
VS-
VS-
VS-
VS-
UNITS
20CTQ035PbF 20CTQ035-N3 20CTQ040PbF 20CTQ040-N3 20CTQ045PbF 20CTQ045-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 145 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1060
265
13
2.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 2.0 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 25-Aug-11
Document Number: 94162
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1827  2831  1642  1166  225  9  36  26  11  24 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved