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1N4148W-G_15

产品描述0.15 A, 75 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小183KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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1N4148W-G_15概述

0.15 A, 75 V, SILICON, SIGNAL DIODE

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1N4148W-G
Taiwan Semiconductor
Small Signal Product
High Speed SMD Switching Diode
FEATURES
- Fast switching device (t
rr
<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10 ± 0.5 mg
- Marking Code: T4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation
DC blocking voltage
Repetitive peak reverse voltage
Work peak reverse voltage
RMS reverse voltage
Repetitive peak forward current
Mean forward current
Non-repetitive peak forward surge current @ t=1 ms
@ t=10 ms
Thermal resistance (Junction to Ambient) (Note 1)
Junction and storage temperature range
PARAMETER
Forward voltage
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=20V
Reverse leakage current
V
R
=75V
V
R
=25V, Tj=150°C
V
R
=75V, Tj=150°C
Junction capacitance
Reverse recovery time
V
R
=0, f=1.0MHz
(Note 2)
C
J
t
rr
I
R
V
F
SYMBOL
P
D
V
R
V
RRM
V
RWM
V
R(RMS)
I
FRM
I
O
I
FSM
R
θJA
T
J
, T
STG
SYMBOL
MIN
-
-
-
-
-
-
-
-
-
-
VALUE
350
100
100
100
70
300
150
2.0
1.0
357
-65 to + 150
MAX
0.715
0.855
1.0
1.25
25
2.5
30
50
2.0
4.0
nA
μA
μA
μA
pF
ns
V
o
UNIT
mW
V
V
V
V
mA
mA
A
C/W
o
C
UNIT
Notes : 1. Valid provided that terminals are kept at ambient temperature
Notes : 2. Reverse Recovery Test Conditions : I
F
=10mA, I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Document Number: DS_S1405027
Version: C15

1N4148W-G_15相似产品对比

1N4148W-G_15 1N4148W-G
描述 0.15 A, 75 V, SILICON, SIGNAL DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE

 
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