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TST20L120CW

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小214KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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TST20L120CW概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB,

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TST20L100CW thru TST20L200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque: 0.56 Nm max.
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP.
I
F
= 5A
Instantaneous forward
voltage per diode (Note1)
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
T
J
= 25°C
V
F
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
T
J
T
STG
0.62
-
0.55
0.65
-
-
MAX.
-
0.84
-
0.74
100
15
TYP.
0.69
-
0.58
0.69
-
-
-
0.93
-
0.78
100
15
3.2
- 55 to +150
- 55 to +150
TST20L
100CW
100
TST20L
120CW
120
20
10
100
10000
MAX.
TYP.
0.78
-
0.64
0.72
-
1.5
MAX.
-
0.96
-
0.81
100
10
TYP.
0.81
-
0.67
0.75
-
1.5
MAX.
-
0.99
-
0.84
100
10
μA
mA
°C/W
°C
°C
V
TST20L
150CW
150
TST20L
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Document Number: DS_D1411086
Version: B14

TST20L120CW相似产品对比

TST20L120CW TST20L100CW TST20L150CW TST20L200CW
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB, Trench Schottky Rectifier Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB, Trench Schottky Rectifier

 
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