TSM6N50
500V N-Channel Power MOSFET
ITO-220
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
500
1.4
25
Unit
V
Ω
nC
TO-252
(DPAK)
Features
●
●
●
●
Low R
DS(ON)
1.4Ω (Max.)
Low gate charge typical @ 25nC (Typ.)
Low Crss typical @ 15pF (Typ.)
Fast Switching
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM6N50CI C0
ITO-220
50pcs / Tube
TSM6N50CP ROG
TO-252
2.5kpcs / 13” Reel
TSM6N50CH C5G
TO-251
75pcs / Tube
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2 )
Symbol
V
DS
V
GS
T
A
= 25ºC
T
A
= 100ºC
I
D
I
DM
E
AS
I
AR
ITO-220
TO-252. TO-251
P
TOT
T
J
T
STG
(Note 3)
Limit
500
±30
5.6
3
15
180
5
25
90
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
ºC
o
Single Pulse Avalanche Energy
Avalanche Current (Repetitive)
Total Power Dissipation @ T
C
= 25 C
Operating Junction Temperature
Storage Temperature Range
o
C
1/8
Version: D14
TSM6N50
500V N-Channel Power MOSFET
Thermal Performance
Parameter
(Note 4)
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
ITO-220
TO-252. TO-251
Symbol
R
ӨJC
R
ӨJA
Limit
5
2.78
62.5
Unit
o
C/W
C/W
o
Electrical Specifications
(T
J
=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
(Note 5,6)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 2.8A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 500V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 8V, I
D
= 1A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Min
500
--
2.0
--
--
--
Typ
--
1.15
--
--
--
2.6
Max
--
1.4
4.0
1
±10
--
Unit
V
Ω
V
µA
µA
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 5,6)
Q
g
V
DS
= 400V, I
D
= 5A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
25
5
10
680
85
15
33
--
--
900
110
20
pF
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
Source Current
Source Current (Pulse)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Integral reverse diode in
the MOSFET
I
S
= 5A, V
GS
= 0V
V
GS
= 0V, I
S
= 5A,
dI
F
/dt = 100A/µs
V
GS
= 10V, I
D
= 5A,
V
DD
= 250V, R
G
=25Ω
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
20
40
90
45
50
90
190
100
ns
I
S
I
SM
V
SD
t
fr
Q
fr
--
--
--
--
--
--
--
--
430
2
5
15
1.6
--
--
A
A
V
ns
µC
Note:
1. Limited by maximum junction temperature
2. V
DD
= 50V, I
AS
=5A, L=10mH, Starting T
J
=25ºC
3. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
4. Surface mounted on FR4 board t
≤
10sec
5. Pulse test: pulse width
≤300µS,
duty cycle
≤2%
6. Essentially Independent of Operating Temperature
2/8
Version: D14
TSM6N50
500V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: D14
TSM6N50
500V N-Channel Power MOSFET
Electrical Characteristics Curves
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/8
Version: D14
TSM6N50
500V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5/8
Version: D14
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