Freescale Semiconductor
Technical Data
Document Number: MRF6P21190HR6
Rev. 5,12/2010
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1900 mA,
P
out
= 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
MRF6P21190HR6
2110-
-2170 MHz, 44 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 44 W CW
Symbol
R
θJC
Value
(2,3)
0.25
0.27
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2004--2006, 2008, 2010. All rights reserved.
MRF6P21190HR6
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistor
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
Dynamic Characteristics
(1,2)
C
rss
—
1.5
—
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 44 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
14.5
25
—
—
—
15.5
26.5
--37
--40
--15
17.5
—
--35
--38
--9
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push--pull configuration.
MRF6P21190HR6
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
B1
V
BIAS
+
C6
R1
C5
+
C4
C3
B2
R2
Z4
RF
INPUT
Z1
Z2
Z3
C7
B3
V
BIAS
+
C12
R3
C11
+
C10
C9
B4
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
0.850″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
1.830″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
0.250″ x 0.067″ Microstrip
0.324″ x 0.178″ Microstrip
0.143″ x 0.655″ Microstrip
0.111″ x 0.655″ Microstrip
0.124″ x 0.712″ Microstrip
Z15, Z16
Z17, Z18
Z19, Z20
Z21
Z22
Z23
Z24
PCB
C8
C1
DUT
Z5
Z7
Z9
Z11
Z13
Z6
Z8
Z10
Z12
C2
Z14
+
C14
C15
+
C19
C16
C17
C18
+
C20
+ V
SUPPLY
C21
Z16
Z18
Z20
C13
Z22
Z23
RF
OUTPUT
Z24
Z15
Z17
Z19
C22
Z21
LIFETIME BUY
+
C23
C24
+
C28
C25
C26
C27
+
C29
+ V
SUPPLY
C30
0.289″ x 0.712″ Microstrip
0.127″ x 0.200″ Microstrip
0.288″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
1.830″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
0.850″ x 0.066″ Microstrip
Taconic RF--35, 0.030″,
ε
r
= 3.5
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
RF Beads
30 pF Chip Capacitors
6.8 pF Chip Capacitors
1k pF Chip Capacitors
1
μF,
50 V Tantalum Chip Capacitors
0.1
μF
Chip Capacitors
100
μF,
50 V Electrolytic Capacitors, Radial
43 pF Chip Capacitors
22
μF,
35 V Tantalum Chip Capacitors
0.56
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitors, Radial
1 kΩ, 1/4 W Chip Resistors
12
Ω,
1/4 W Chip Resistors
Description
Part Number
2743019447
ATC100B300JT500XT
ATC100B6R8CT500XT
ATC100B102JT50XT
T491C105K050AT
CDR33BX104AKWT
EEEFK1H101P
ATC100B430JT500XT
T491X226K035AT
C1825C564J5RAC
477KXM063M
CRCW12061001FKEA
CRCW120612R0FKEA
Manufacturer
Fair--Rite
ATC
ATC
ATC
Kemet
Kemet
Panasonic
ATC
Kemet
Kemet
Illinois Capacitor
Vishay
Vishay
B1, B2, B3, B4
C1, C7
C2, C8, C15, C24
C3, C9, C18, C27
C4, C10
C5, C11, C17, C26
C6, C12
C13, C22
C14, C19, C20, C23,
C28, C29
C16, C25
C21, C30
R1, R3
R2, R4
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
--
+
C6
R1
C5 C4
C3
MRF6P21190
Rev 2
C14
C15
C16
C17
C18
--
C21
C2
R2
B1
B2
C1
C19
C13
C20
+
C7
C22
C28
C29
R4 B3 B4
+
+
C12
R3
C11
C10
C9
C8
C23
C24
C25
C26
C27
--
--
C30
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
MRF6P21190HR6
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
CUT OUT AREA
TYPICAL CHARACTERISTICS
20
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
6
4
2080
IRL
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 1900 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
η
D
40
η
D
, DRAIN
EFFICIENCY (%)
20
10
--10
--20
--30
--40
2120
2140
2160
2180
2200
--50
2220
IM3 (dBc), ACPR (dBc)
--10
--15
--20
--25
--30
IM3
ACPR
2100
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 44 Watts Avg.
20
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
6
4
2080
ACPR
2100
2120
2140
2160
2180
2200
IRL
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 87 W (Avg.), I
DQ
= 1900 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
50
40
30
20
0
--10
--20
--30
--40
2220
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--10
--15
--20
--25
--30
IM3
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 87 Watts Avg.
17
16.5
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--35
2200 mA
--40
--45
--50
--55
1300 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
1900 mA
1600 mA
I
DQ
= 2500 mA
2200 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
I
DQ
= 2500 mA
16
15.5
15
14.5
14
1
1300 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
1900 mA
1600 mA
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
30
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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