TSM4NB60
600V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
(Ω)
2.5 @ V
GS
=10V
I
D
(A)
4
General Description
TO-251
(IPAK)
TO-252
(DPAK)
The TSM4NB60 N-Channel Power MOSFET is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize
on-state
resistance,
provide
superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
Features
●
●
●
●
Low R
DS(ON)
2.2Ω (Typ.)
Low gate charge typical @ 14.5nC (Typ.)
Low Crss typical @ 7pF (Typ.)
100% Avalanche Tested
Block Diagram
Ordering Information
Part No.
TSM4NB60CH C5G
TSM4NB60CP ROG
TSM4NB60CZ C0
Package
TO-251
TO-252
TO-220
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
TSM4NB60CI C0G
ITO-220
Note:
“G” denotes for Halogen Free
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ T
C
=25ºC
Operating Junction Temperature
Storage Temperature Range
Note:
Limited by maximum junction temperature
T
C
=25ºC
T
C
=100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
TOT
T
J
T
STG
Limit
IPAK/DPAK
ITO-220
600
±30
4
2.4
16
70
4
5
4.5
50
25
150
-55 to +150
70
TO-220
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
W
ºC
o
C
1/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨ
JC
RӨ
JA
Limit
IPAK/DPAK
2.5
83
ITO-220
5
62.5
TO-220
1.78
62.5
Unit
o
o
C/W
C/W
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source Current
Source Current (Pulse)
Diode Forward Voltage
Reverse Recovery Time
V
GS
= 10V, I
D
= 4A,
V
DD
= 300V, R
G
=25Ω
(Note 4,5)
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
--
--
--
--
--
--
--
--
11
20
30
19
--
--
--
522
1.6
--
--
--
--
4
16
1.13
--
--
A
A
V
ns
µC
ns
V
DS
= 480V, I
D
= 4A,
V
GS
= 10V
(Note 4,5)
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
14.5
3.4
7
500
53.2
7
--
--
--
--
--
--
pF
nC
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 40V, I
D
= 2A
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
600
--
2.5
--
--
--
--
2.2
3.5
--
--
2.6
--
2.5
4.5
1
±100
--
V
Ω
V
µA
nA
S
Conditions
Symbol
Min
Typ
Max
Unit
Source-Drain Diode Ratings and Characteristic
Integral reverse diode in
the MOSFET
I
S
= 4A, V
GS
= 0V
V
GS
= 0V, I
S
=4A,
dI
F
/dt = 100A/µs
Reverse Recovery Charge
Q
rr
--
Note 1:
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2:
V
DD
= 50V, I
AS
=4A, L=8mH, R
G
=25Ω, Starting T
J
=25ºC
Note 3:
I
SD
≤4A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
=25ºC
Note 4:
Pulse test: pulse width
≤300µs,
duty cycle
≤2%
Note 5:
Essentially Independent of Operating Temperature
2/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
3/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25ºC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
.
5/11
Version: F13
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