TSM1N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 0.3A, 21.6Ω
FEATURES
●
●
●
Advanced planar process
100% avalanche tested
Fast switching
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
800
21.6
5
UNIT
V
Ω
nC
APPLICATION
●
●
Power Supply
Lighting
SOT-223
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
(Note 1)
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
P
DTOT
T
J
T
J
, T
STG
LIMIT
800
±30
0.3
1
90
1
2.1
150
- 55 to +150
UNIT
V
V
A
A
mJ
A
W
°C
°C
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Not-Repetitive
Total Power Dissipation @ T
C
= 25°C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJA
LIMIT
60
UNIT
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000037
1
Version: B15
TSM1N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
(Note 3)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
V
GS
= 0V, I
D
= 1mA
V
GS
= 10V, I
D
= 0.15A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 800V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 40V, I
D
= 0.1A
I
S
= 0.2A, V
GS
= 0V
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
800
--
3
--
--
--
--
--
18
--
--
--
0.36
--
--
21.6
5
25
±10
--
1.4
V
Ω
V
µA
µA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 4)
--
--
--
--
--
--
5
1
2
155
20
2.7
6
--
--
200
26
4
pF
nC
V
DS
= 640V, I
D
= 0.3A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Note:
1.
2.
3.
4.
Pulse test: pulse width <=300uS, duty cycle <=2%
(V
DD
= 50V, I
AS
=0.8A, L=170mH, R
G
=25Ω)
For design reference only, not subject to production testing.
Switching time is essentially independent of operating temperature.
t
d(on)
V
GS
= 10V, I
D
= 0.3A,
V
DS
= 400V, R
G
= 25Ω
t
r
t
d(off)
t
f
--
--
--
--
10
20
16
25
30
50
45
60
ns
Document Number: DS_P0000037
2
Version: B15
TSM1N80
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM1N80CW RPG
PACKAGE
SOT-223
PACKING
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000037
3
Version: B15
TSM1N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000037
4
Version: B15
TSM1N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000037
5
Version: B15
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
