TSM10N80
800V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
800
1.05
53
Unit
V
Ω
nC
Features
●
●
●
Low R
DS(ON)
1.05Ω (Max.)
Low gate charge typical @ 53nC (Typ.)
Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM10N80CZ C0G
Package
TO-220
Packing
50pcs / Tube
TSM10N80CI C0G
ITO-220
50pcs / Tube
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt
I
AR
E
AR
T
J
T
STG
(Note 3)
(Note 4)
Limit
800
±30
9.5
38
267
4.5
9.5
29
150
-55 to +150
Unit
V
V
A
A
mJ
V
A
mJ
ºC
o
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Avalanche Current (Repetitive)
Repetitive Avalanche Energy
(Note 4)
Operating Junction Temperature
Storage Temperature Range
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
TO-220
ITO-220
Symbol
R
ӨJC
R
ӨJA
Limit
0.43
2.6
62.5
Unit
o
C/W
Thermal Resistance - Junction to Ambient
TO-220 / ITO-220
Notes:
Surface mounted on FR4 board t
≤
10sec
1/8
Version: C14
TSM10N80
800V N-Channel Power MOSFET
Electrical Specifications
(T
J
=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
(Note 6)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 4.75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 800V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 30V, I
D
= 4.75A
I
S
= 9.5A, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
800
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.9
--
--
--
6.3
--
53
10
23
2336
214
29
63
62
256
72
450
5.3
Max
--
1.05
4.0
10
±100
--
1.5
--
--
--
--
--
--
--
--
--
--
--
--
Unit
V
Ω
V
µA
nA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 7)
V
DS
= 640V, I
D
= 9.5A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
V
GS
= 0V, I
S
= 9.5A,
V
GS
= 10V, I
D
= 9.5A,
V
DD
= 400V, R
G
= 25Ω
t
r
t
d(off)
t
f
t
fr
ns
ns
µC
dI
F
/dt = 100A/us
Reverse Recovery Charge
Q
fr
Notes:
1. Limited by maximum junction temperature
2. V
DD
= 50V, I
AS
=10A, L=5mH, R
G
=25Ω
3. I
SD
≤9.5A,
di/dt
≤
200A/µs, V
DD
≤
BV
4. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
5. Pulse test: pulse width
≤300µs,
duty cycle
≤2%
6. For design reference only, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
2/8
Version: C14
TSM10N80
800V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: C14
TSM10N80
800V N-Channel Power MOSFET
Electrical Characteristics Curves
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/8
Version: C14
TSM10N80
800V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/8
Version: C14
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