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HLB125EB4

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小49KB,共5页
制造商HSMC
官网地址http://www.hsmc.com.tw/
下载文档 详细参数 选型对比 全文预览

HLB125EB4概述

Transistor

HLB125EB4规格参数

参数名称属性值
厂商名称HSMC
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)5 A
配置Single
最小直流电流增益 (hFE)23
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)40 W
表面贴装NO

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2004.11.03
Page No. : 1/5
HLB125E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125E is designed for lighting applications and low switch-mode power
supplies. And it is high voltage capability and high switching speeds.
TO-220
Internal Schematic Diagram
Features
High Speed Switching
Low Saturation Voltage
High Reliability
B
C
Absolute Maximum Ratings
E
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 40 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 600 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 9 V
I
C
Collector Current (DC) ....................................................................................................................................... 5 A
I
C
Collector Current (Pulse).................................................................................................................................... 8 A
I
B
Base Current (DC).............................................................................................................................................. 2 A
I
B
Base Current (Pulse).......................................................................................................................................... 4 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
Min.
600
400
9
-
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
0.7
1.1
1.1
1.2
35
-
Unit
V
V
V
UA
uA
V
V
V
V
V
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10mA, I
C
=0
V
CE
=700V
V
CE
=400V
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.4A
I
C
=3A, I
B
=0.75A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.4A
I
C
=2A, V
CE
=5V
I
C
=10mA, V
CE
=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
hFE1
HLB125E
B1
8-17
B2
15-21
B3
19-25
B4
23-31
B5
29-35
HSMC Product Specification

HLB125EB4相似产品对比

HLB125EB4 HLB125EB1
描述 Transistor Transistor
厂商名称 HSMC HSMC
Reach Compliance Code unknown unknown
最大集电极电流 (IC) 5 A 5 A
配置 Single Single
最小直流电流增益 (hFE) 23 8
最高工作温度 150 °C 150 °C
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 40 W 40 W
表面贴装 NO NO

 
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