TSH248
Micropower Omni-Polar Hall Effect Switch
TSOT-23
Pin Definition:
1. V
CC
2. Output
3. GND
Description
TSH248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior high-
temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-
stabilization. This method reduces the offset voltage normally caused by device over-molding, temperature
dependencies and thermal stress.
TSH248 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal
amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing
is used to take advantage of low-voltage requirements, component matching, very low input-offset errors and
small component geometries.
Features
●
●
●
●
CMOS Hall IC Technology
Solid-State Reliability
Low power consumption for battery applications
Operation voltage range from 2.5V~3.5V
Ordering Information
Part No.
TSH248CX RFG
Package
TSOT-23
Packing
3kpcs / 7” Reel
Note:
“G” denote for Halogen Free Product
Application
●
●
●
●
Solid state switch
Lid close sensor for power supply devices
Magnet proximity sensor for reed switch
replacement in high duty cycle applications.
Handheld Wireless Handset Awake Switch (Flip
Cell/PHS Phone/Note Book/Flip Video Set)
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Characteristics
Supply voltage
Output Voltage
Reverse voltage
Magnetic flux density
Output current
Operating Temperature Range
Storage temperature range
Maximum Junction Temp
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
Package Power Dissipation
I
OUT
T
OPR
T
STG
T
J
Rθ
JA
Rθ
JC
P
D
Limit
V
CC
V
OUT
V
CC/OUT
Value
5
5
-0.3
Unlimited
2
-40 to +85
-55 to +150
150
543
410
230
Unit
V
V
V
G
mA
o
o
o
o
o
C
C
C
C/W
C/W
mW
Note:
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
1/8
Version: B14
TSH248
Micropower Omni-Polar Hall Effect Switch
Block Diagram
Note:
Static sensitive device; please observe ESD precautions. Reverse V
CC
protection is not included. For reverse
voltage protection, a 100Ω resistor in series with V
CC
is recommended.
Typical Application Circuit
C1：10nF
C2：100pF
R1：100kΩ
2/8
Version: B14
TSH248
Micropower Omni-Polar Hall Effect Switch
Electrical Specifications
(
DC Operating Parameters: T
A
=+25
o
C, V
CC
=3V)
Parameters
Supply Voltage
Operating
Awake State
Supply Current
Sleep State
Average
Output Low Voltage
Output Leakage Current
Awake Mode Time
Sleep Mode Time
Duty Cycle
I
OUT
=1mA
Output off
Operating
Operating
Test Conditions
Min
2.5
--
--
--
Typ
--
2.5
8.0
10
Max
3.5
4.0
12
16
0.3
1
--
--
--
Units
V
mA
µA
µA
V
µA
µs
ms
%
--
--
--
--
--
--
--
70
70
0.1
Magnetic Specifications
DC Operating Parameters T
A
=25 C, V
CC
=3.0V
o
Parameter
Operating
Point
Release
Point
Hysteresis
Symbol
B
OPS
B
OPN
B
RPS
B
RPN
B
HYS
Test Conditions
N pole to branded side, B > B
OP
, V
OUT
On
S pole to branded side, B > B
OP
, V
OUT
On
N pole to branded side, B < B
RP
, V
OUT
Off
S pole to branded side, B < B
RP
, V
OUT
Off
|BOPx - BRPx|
Min.
6
-60
5
-60
--
Typ.
--
--
--
--
7
Max.
60
-6
-59
-5
--
Units
G
G
G
G
G
Note:
1G (Gauss) = 0.1mT (millitesla)
3/8
Version: B14
TSH248
Micropower Omni-Polar Hall Effect Switch
Characteristic Performance
Figure 1. Flux Density vs. Supply Voltage
Figure 2. Flux Density vs. Temperature
Figure 3. Supply Current vs. Supply Voltage
Figure 4. Supply Current vs. Temperature
Figure 5. Output Saturation Voltage vs.
Supply Voltage
5/8
Figure 6. Output Saturation Voltage vs.
Temperature
Version: B14
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