NOT RECOMMENDED FOR NEW DESIGN
USE
MJD32CUQ
MJD32CQ
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
Features
BV
CEO
> -100V
I
C
= -3A high Continuous Collector Current
I
CM
= -5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31CQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
TO252 (DPAK)
C
B
E
Top View
Device Schematic
Pin Out Configuration
Top View
Ordering Information
(Notes 4 & 5)
Product
MJD32CQ-13
Notes:
Compliance
Automotive
Marking
MJD32C
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD32C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 - 53)
MJD32CQ
Document number: DS37050 Rev. 3 - 3
1 of 7
www.diodes.com
November 2016
© Diodes Incorporated
MJD32CQ
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
Value
-100
-100
-6
-3
-5
-1
15
Unit
V
V
V
A
A
A
W
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P
D
Value
3.9
2.1
1.6
32
59
80
8.4
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J
, T
STG
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD32CQ
Document number: DS37050 Rev. 3 - 3
2 of 7
www.diodes.com
November 2016
© Diodes Incorporated
MJD32CQ
Thermal Characteristics
10
-I
C
Collector Current (A)
Limited
-I
C
Collector Current (A)
V
CE(sat)
10
V
CE(sat)
Limited
DC
100ms
10ms
1ms
1
DC
1s
100ms
10ms
1ms
100µs
Single Pulse
T
amb
=25°C
1
100m
0.1
Single Pulse
T
CASE
=25°C
100
s
10m
100m
1
10
100
-V
CE
Collector-Emitter Voltage (V)
0.01
0.1
1
10
100
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Thermal Resistance (°C/W)
T
AMB
=25°C
Minimum Copper
Safe Operating Area
Thermal Resistance (°C/W)
8
80
60
6
D=0.5
D=0.5
40
D=0.2
4
D=0.2
D=0.1
20
0
100µ
D=0.1
Single Pulse
D=0.05
2
D=0.05
Single Pulse
T
CASE
=25°C
1m
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
MJD32CQ
Document number: DS37050 Rev. 3 - 3
3 of 7
www.diodes.com
November 2016
© Diodes Incorporated
MJD32CQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CEO
I
CEO
I
CES
I
EBO
V
CE(sat)
V
BE(on)
h
FE
H
fe
f
T
Min
-100
25
10
20
3.0
Typ
Max
-1
-1
-1
-1.2
-1.8
50
Unit
V
μA
μA
μA
V
V
MHz
Test Condition
I
C
= -30mA, I
B
= 0
V
CB
= -60V, I
B
= 0
V
CE
= -100V, V
EB
= 0
V
EB
= -5V, I
C
= 0
I
C
= -3.0A, I
B
= -375mA
I
C
= -3A, V
CE
= -4V
V
CE
= -4V, I
C
= -1A
V
CE
= -4V, I
C
= -3A
V
CE
= -10V, I
C
= -0.5A, f = 1KHz
I
C
= -500mA, V
CE
= -10V, f = 1MHz
Characteristic
Collector-Emitter Breakdown Voltage (Note 11)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Current Signal Current Gain
Current Gain-Bandwidth Product
Note:
11. Measured under pulsed conditions. Pulse width
300μs. Duty cycle
2%.
MJD32CQ
Document number: DS37050 Rev. 3 - 3
4 of 7
www.diodes.com
November 2016
© Diodes Incorporated
MJD32CQ
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1,000
V
CE
= -4V
1
I
C
/I
B
= 8
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
100
T
A
= -55°C
0.01
10
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1
0.001
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 8
1.2
1.0
0.8
V
CE
= -4V
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.4
1.2
1.0
0.8
T
A
= -55°C
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.6
T
A
= 25°C
0.4
0.4
T
A
= 150°C
T
A
= 85°C
0.2
0
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
f = 1MHz
0.2
0
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
CAPACITANCE (pF)
C
ibo
100
C
obo
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 5 Typical Capacitance Characteristics
MJD32CQ
Document number: DS37050 Rev. 3 - 3
5 of 7
www.diodes.com
November 2016
© Diodes Incorporated
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