GUVA-T11GD-L
TECHNICAL DATA
UV-A Sensor
Features
•
•
•
•
•
Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current
Applications
•
•
•
Full UV Band Monitoring
UV-A Lamp Monitoring
Sterilization Lamp Monitoring
Absolute Maximum Ratings
Item
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature *
Symbol
I
F
V
R
T
op
T
st
T
sol
Value
1
5
-30 … +85
-40 … +90
260
Unit
mA
V
°C
°C
°C
* must be completed within 10 seconds
Characteristics (25°C)
Item
Dark Current
Photo Current
Temperature Coefficient
Responsivity
Spectral Detection Range
Symbol
I
D
I
PD
I
TC
R
λ
Test Conditions
VR
= 0.1 V
UVA Lamp, 1 mW/cm²
UVA Lamp
λ = 350 nm, V
R
= 0 V
10% of R
Min.
-
-
-
-
220
Typ.
-
3.1
0.05
0.18
-
Max.
10
-
-
-
370
Unit
nA
µA
% / °C
A/W
nm
Package Dimension
www.roithner-laser.com
1
Responsivity Curve
Photocurrent along UV Power
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The above specifications are for reference purpose only and subjected to change without prior notice
www.roithner-laser.com
2
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