JMnic
Product Specification
Silicon NPN Power Transistors
2SC1905
DESCRIPTION
・With
TO-220C package
・High
breakdown voltage
・Large
collector power dissipation
APPLICATIONS
・Color
TV horizontal deflection
driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
350
300
7.5
200
400
15
150
-55~150
UNIT
V
V
V
mA
mA
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1905
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=5mA ; I
B
=0
300
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=100μA ; I
E
=0
350
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=100μA ; I
C
=0
7.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=50mA; I
B
=5mA
1.0
V
μA
I
CBO
Collector cut-off current
V
CB
=200V ;I
E
=0
2
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
2
μA
h
FE
DC current gain
I
C
=10m A ; V
CE
=10V
40
250
f
T
Transition frequency
I
C
=10m A ; V
CE
=30V
50
MHz
C
OB
Output capacitance
I
E
=0 ; V
CB
=50V; f=1MHz
4.5
pF
μs
t
stg
Storage time
I
C
=100mA; I
B1
=10mA; I
B2
=0
5
7.5
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1905
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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