TO
-2
20F
BYC8DX-600
Hyperfast power diode
Rev. 01 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Isolated plastic package
Low reverse recovery current
Low thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
square-wave pulse;
δ
= 0.5 ;
T
h
= 47 °C;
see
Figure 1;
see
Figure 2
I
F
= 8 A; T
j
= 150 °C;
see
Figure 4
I
F
= 8 A; T
j
= 25 °C
Dynamic characteristics
t
rr
reverse recovery
time
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 25 °C;
see
Figure 5
-
20
-
ns
Conditions
Min
-
-
Typ
-
-
Max Unit
600
8
V
A
Static characteristics
V
F
forward voltage
-
-
1.5
2
1.85 V
2.9
V
NXP Semiconductors
BYC8DX-600
Hyperfast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC8DX-600
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
BYC8DX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 December 2010
2 of 11
NXP Semiconductors
BYC8DX-600
Hyperfast power diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
DC
square-wave pulse;
δ
= 0.5 ;
T
h
= 47 °C; see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
h
= 47 °C
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
600
600
600
8
16
55
60
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
20
P
tot
(W)
16
2.8
12
4.0
1.9
2.2
003aab471
30
P
tot
(W)
25
0.5
0.2
0.1
003aab472
a = 1.57
δ
=1
20
15
8
10
4
5
0
0
2
4
6
I
F(AV)
(A)
8
0
0
4
8
I
F(AV)
(A)
12
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYC8DX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 December 2010
3 of 11
NXP Semiconductors
BYC8DX-600
Hyperfast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient free air
Conditions
without heatsink compound
with heatsink compound ;
see
Figure 3
Min
-
-
-
Typ
-
-
60
Max
7.2
5.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-h)
(K/W)
1
001aaf257
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz ; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC8DX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 December 2010
4 of 11
NXP Semiconductors
BYC8DX-600
Hyperfast power diode
7. Characteristics
Table 7.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
F
= 8 A; T
j
= 25 °C
V
R
= 500 V; T
j
= 100 °C
V
R
= 600 V
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 1 A; V
R
= 100 V; dI
F
/dt = 100 A/µs
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; see
Figure 5
I
RM
peak reverse recovery
current
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C
V
FR
forward recovery
voltage
I
F
= 10 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 6
-
-
-
-
-
-
-
13
32
30
20
9.5
1.5
8
-
40
52
-
12
5.5
10
nC
ns
ns
ns
A
A
V
Min
-
-
-
-
Typ
1.5
2
1.1
9
Max
1.85
2.9
3
40
Unit
V
V
mA
µA
Static characteristics
20
I
F
(A)
16
003aac976
I
F
dl
F
dt
t
rr
12
time
8
25 %
(1)
(2)
(3)
Q
r
100 %
4
I
R
I
RM
003aac562
0
0
1
2
3
V
F
(V)
4
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Reverse recovery definitions; ramp recovery
BYC8DX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 December 2010
5 of 11
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